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SNJ54AS640J

Texas Instruments

SNJ54AS640J by Texas Instruments

SNJ54AS640J by Texas Instruments is an 8-bit bus driver with a propagation delay of 11ns at 5V. It features a MIL-PRF-38535 screening level and operates in a temperature range of -55 to 125°C. Ideal for military applications requiring bidirectional control with inverted output polarity.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 2,351 parts In-Stock

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Vyrian

USA . 2,248 parts In-Stock

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Resion

USA . 33 parts In-Stock

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R&J Components

USA . 24 parts In-Stock

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Prism Electronics

USA . 2 parts In-Stock

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AZTECH Wire

Italy . 783 parts In-Stock

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$5.019

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Andel Nordic

Denmark . 1,051 parts In-Stock

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$5.989

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$5.750

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$5.750

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$5.750

Parana Technologies

USA . 1,176 parts In-Stock

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$20.199

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$1,875.742

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$18.179

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DigiPath Technology Company

USA . 1,270 parts In-Stock

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$22.241

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$20.462

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ChromeModa Solutions

Germany . 4,885 parts In-Stock

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$22.695

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$18.610

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IDEA Electronic Components Group

UK . 2,073 parts In-Stock

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$22.695

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$21.560

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$20.426

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One Stop Electronics

USA . 1,078 parts In-Stock

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Corphita

USA . 3,481 parts In-Stock

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Microchip USA

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Perfect Parts

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Overview

Enhance your electronics projects with the SNJ54AS640J by Texas Instruments, a top-tier manufacturer renowned for quality and reliability. As part of the Bus Driver & Transceivers category, this component offers seamless data transmission with minimal propagation delay, making it ideal for a wide range of applications. From industrial automation to consumer electronics, this product delivers exceptional value and performance. Trust Texas Instruments to provide cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The use of ceramic and glass-sealed package body material provides durability and reliability, making this product suitable for rugged environments.

Propagation Delay At Nominal Supply: 11 ns

With a low propagation delay, this product ensures quick signal transmission, making it ideal for high-speed applications.

Screening Level: MIL-PRF-38535

Compliance with MIL-PRF-38535 screening level ensures that the product meets high-quality standards and is suitable for military applications.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard supply voltage of 5V makes this product compatible with a wide range of electronic systems.

Output Characteristics: 3-STATE

The 3-STATE output feature allows the bus driver to disconnect from the bus line when not in use, reducing power consumption and improving overall system performance.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this product can withstand elevated temperatures without any performance issues, making it suitable for harsh environments.

Technical Specifications

Bus Driver & Transceivers SNJ54AS640J attributes and parameters. Explore more Bus Driver & Transceivers devices from Texas Instruments

Specs

Additional Features:

WITH DIRECTION CONTROL

Control Type:

COMMON CONTROL

Count Direction:

BIDIRECTIONAL

Family:

AS

JESD-30 Code:

R-GDIP-T20

JESD-609 Code:

e0

Length:

24.195 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

48 Amp

No. of Bits:

8

No. of Functions:

1

No. of Ports:

2

No. of Terminals:

20

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

3-STATE

Output Polarity:

INVERTED

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Equivalence Code:

DIP20,.3

Package Shape:

Package Style (Meter):

IN-LINE

Packing Method:

TUBE

Power Supplies (V):

5

Maximum Power Supply Current (ICC):

211 mA

Propagation Delay At Nominal Supply:

11 ns

Propagation Delay (tpd):

7 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Screening Level:

MIL-PRF-38535

Maximum Seated Height:

5.08 mm

Sub-Category:

Bus Driver/Transceivers

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Translation:

N/A

Width:

7.62 mm

Trade Compliance

SNJ54AS640J Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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