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SN74LVCU04APWTG4

Texas Instruments

SN74LVCU04APWTG4 by Texas Instruments

SN74LVCU04APWTG4 by Texas Instruments is a Logic Gates IC with 6 functions, 3.8 ns propagation delay, and 1.8V nominal voltage. It is used in industrial applications requiring CMOS technology, operating b/w -40 to 85°C, with a max supply voltage of 3.6V for surface mount assembly.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 9,675 parts In-Stock

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9,675

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Digiode

USA . 2,436 parts In-Stock

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2,436

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Distributors (Availability)

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Parana Technologies

USA . 656 parts In-Stock

1+ parts

$7.858

100+ parts

-

1k+ parts

$8.414

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656

$7.858

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$8.414

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One Stop Electronics

USA . 1,211 parts In-Stock

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$8.000

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1,211

$8.000

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DigiPath Technology Company

USA . 1,368 parts In-Stock

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$8.652

100+ parts

$7.960

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1,368

$8.652

$7.960

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ChromeModa Solutions

Germany . 6,400 parts In-Stock

1+ parts

$8.829

100+ parts

$7.240

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6,400

$8.829

$7.240

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IDEA Electronic Components Group

UK . 1,750 parts In-Stock

1+ parts

$8.829

100+ parts

$8.388

1k+ parts

$7.946

10k+ parts

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1,750

$8.829

$8.388

$7.946

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AZTECH Wire

Italy . 801 parts In-Stock

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$18.379

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801

$18.379

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Corphita

USA . 670 parts In-Stock

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670

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Microchip USA

USA . 398 parts In-Stock

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Overview

Discover the high-quality SN74LVCU04APWTG4 by Texas Instruments, a reliable Logic Gates component perfect for various applications. With a compact design and fast propagation delay, this product offers exceptional performance and durability. Trust in Texas Instruments' expertise to deliver top-notch electronic components that meet your needs. Upgrade your projects with the SN74LVCU04APWTG4 and experience the value and benefits it brings to your creations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the logic gates.

Propagation Delay At Nominal Supply: 3.8 ns

Fast propagation delay ensures quick response time for the logic gates.

Surface Mount: YES

Allows for easy and efficient installation on circuit boards.

No. of Functions: 6

Offers versatility in terms of functions and applications for the logic gates.

Package Shape: RECTANGULAR

Compact shape allows for space-saving installation on circuit boards.

Nominal Supply Voltage / Vsup (V): 1.8

Ideal supply voltage for efficient and reliable operation of the logic gates.

Load Capacitance (CL): 50 pF

Suitable load capacitance for optimal performance of the logic gates.

Power Supplies (V): 3.3

Compatible with standard power supplies for easy integration into existing systems.

No. of Terminals: 14

Sufficient terminals for connecting the logic gates to other components in a circuit.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Streamlined package design for efficient use of space on circuit boards.

Maximum I (ol): 24 Amp

High output current capability for driving external loads.

Propagation Delay (tpd): 7.3 ns

Another indication of fast response time for the logic gates.

Maximum Operating Temperature: 85 °C

Wide operating temperature range for versatility in different environments.

Minimum Operating Temperature: -40 °C

Can withstand low temperatures for reliable operation in various conditions.

Terminal Finish: NICKEL PALLADIUM GOLD

Provides corrosion resistance and reliable connections for the terminals.

Terminal Position: DUAL

Dual terminal position for flexibility in circuit board layout.

Maximum Seated Height: 1.2 mm

Low profile design for space-constrained applications.

Width: 4.4 mm

Compact width for efficient use of space on circuit boards.

Minimum Supply Voltage (Vsup): 1.65 V

Low minimum supply voltage for energy-efficient operation.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperatures for soldering processes.

Peak Reflow Temperature °C: 260

High peak reflow temperature capability for reliable soldering.

Length: 5 mm

Optimal length for efficient placement on circuit boards.

Temperature Grade: INDUSTRIAL

Suitable for industrial applications with demanding temperature requirements.

Technology: CMOS

CMOS technology for low power consumption and high reliability.

Terminal Form: GULL WING

Gull wing terminal form for easy soldering and secure connections.

Packing Method: TR

Tray packing method for convenient handling and storage of the logic gates.

Terminal Pitch: 0.65 mm

Fine terminal pitch for compact layout and efficient use of space.

Maximum Supply Voltage (Vsup): 3.6 V

High maximum supply voltage for compatibility with various power sources.

Technical Specifications

Logic Gates SN74LVCU04APWTG4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Length:

5 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

6

No. of Inputs:

1

No. of Terminals:

14

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP14,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Propagation Delay At Nominal Supply:

3.8 ns

Propagation Delay (tpd):

7.3 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.2 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

4.4 mm

Trade Compliance

SN74LVCU04APWTG4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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