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SN74LVC3G14DCURE4

Texas Instruments

SN74LVC3G14DCURE4 by Texas Instruments

SN74LVC3G14DCURE4 by Texas Instruments is a CMOS logic gate with 3 functions, featuring a propagation delay of 5.4 ns at 1.8V supply voltage. This Schmitt Trigger operates in automotive temperature grades and has a max operating temperature of 125°C, making it suitable for high-performance applications requiring fast response times. With a small outline package style and gull wing terminal form, this device is ideal for compact designs where space is limited.

Median Price

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Lifecycle Status

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4

In-Stock Inventory

1k+

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Chip Stock

USA . 42,500 parts In-Stock

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Vyrian

USA . 7,329 parts In-Stock

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Digiode

USA . 1,549 parts In-Stock

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Nova Conductors

Japan . 44 parts In-Stock

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AZTECH Wire

Italy . 355 parts In-Stock

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$13.350

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$13.350

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Parana Technologies

USA . 1,278 parts In-Stock

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$16.403

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$16.698

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DigiPath Technology Company

USA . 1,942 parts In-Stock

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$18.061

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ChromeModa Solutions

Germany . 1,863 parts In-Stock

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$18.430

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$15.113

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IDEA Electronic Components Group

UK . 515 parts In-Stock

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$18.430

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$17.508

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$16.587

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Corohmni

South Africa . 251 parts In-Stock

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$27.614

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One Stop Electronics

USA . 523 parts In-Stock

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Semicontronic

India . 1,487 parts In-Stock

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Ampacity Inc.

Singapore . 1,258 parts In-Stock

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Component Stockers USA

USA . 309 parts In-Stock

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Continental Prestige Electronics

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Microchip USA

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Argo Parts USA

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Corphita

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Advanced Electronics

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Bastille Electronics

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Overview

Discover the innovative SN74LVC3G14DCURE4 by Texas Instruments, a high-quality logic gate that offers exceptional performance and reliability. With Texas Instruments' reputation for excellence in manufacturing, this product is designed to meet the demands of various applications. From its compact design to its low propagation delay, this logic gate provides value and efficiency to customers seeking top-notch electronic components. Upgrade your projects with the SN74LVC3G14DCURE4 and experience the benefits of cutting-edge technology at your fingertips.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection for the internal components of the logic gates, ensuring a longer lifespan.

Propagation Delay At Nominal Supply: 5.4 ns

With a low propagation delay, these logic gates are responsive and efficient in processing signals quickly.

Surface Mount: YES

Being surface mountable makes the installation of these logic gates easier and more convenient, saving space on the circuit board.

Nominal Supply Voltage / Vsup (V): 1.8

Operating at a low voltage of 1.8V helps in reducing power consumption and heat generation, making these logic gates energy-efficient.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, these logic gates can withstand harsh environmental conditions, making them suitable for a wide range of applications.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making these logic gates reliable and efficient for digital signal processing.

Technical Specifications

Logic Gates SN74LVC3G14DCURE4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-G8

Length:

2.3 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

No. of Functions:

3

No. of Inputs:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.12,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3.3

Propagation Delay At Nominal Supply:

5.4 ns

Propagation Delay (tpd):

9.2 ns

Qualification:

Not Qualified

Schmitt Trigger:

YES

Maximum Seated Height:

.9 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

2 mm

Trade Compliance

SN74LVC3G14DCURE4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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