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SN74LV04ADRG4

Texas Instruments

SN74LV04ADRG4 by Texas Instruments

SN74LV04ADRG4 by Texas Instruments is a CMOS logic gate with 6 functions, 12 ns propagation delay, and 50 pF load capacitance. It operates at a supply voltage of 2-5.5V and is ideal for automotive applications due to its small outline package and dual terminal position.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,335 parts In-Stock

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Digiode

USA . 2,880 parts In-Stock

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2,880

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Semi Source

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AZTECH Wire

Italy . 367 parts In-Stock

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$12.988

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367

$12.988

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One Stop Electronics

USA . 1,246 parts In-Stock

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$19.000

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Parana Technologies

USA . 1,303 parts In-Stock

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$28.372

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$2,634.799

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$25.535

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1,303

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$2,634.799

$25.535

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DigiPath Technology Company

USA . 1,318 parts In-Stock

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$31.241

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$28.742

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$31.241

$28.742

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ChromeModa Solutions

Germany . 2,254 parts In-Stock

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$31.879

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$26.141

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IDEA Electronic Components Group

UK . 904 parts In-Stock

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$31.879

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$30.285

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$28.691

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904

$31.879

$30.285

$28.691

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Ampacity Inc.

Singapore . 1,643 parts In-Stock

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$47.000

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Argo Parts USA

USA . 4,628 parts In-Stock

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Continental Prestige Electronics

USA . 2,536 parts In-Stock

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Aranea Global

USA . 2,000 parts In-Stock

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Microchip USA

USA . 1,533 parts In-Stock

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Corphita

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841

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Overview

Elevate your electronic designs with the SN74LV04ADRG4 by Texas Instruments, a top-quality logic gate that offers unmatched reliability and performance. Manufactured by the industry leader in semiconductor technology, this versatile component is perfect for a wide range of applications. With a low propagation delay, small outline package style, and dual terminal position, this product delivers exceptional value and efficiency. Trust Texas Instruments to provide cutting-edge solutions for all your electronics needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Propagation Delay At Nominal Supply: 12 ns

The low propagation delay at nominal supply voltage ensures fast operation and responsiveness in data processing, making this product suitable for time-critical applications.

Surface Mount: YES

Being surface mountable makes installation and integration of this logic gate chip easier, especially in compact electronic designs where space is limited.

Nominal Supply Voltage / Vsup (V): 2.5

The low nominal supply voltage requirement of 2.5V allows for efficient power consumption, making this product energy-efficient and cost-effective to operate.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125°C, this logic gate chip can withstand elevated temperatures without performance degradation, ideal for industrial and automotive applications.

Technical Specifications

Logic Gates SN74LV04ADRG4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

LV/LV-A/LVX/H

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Length:

8.65 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

12 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

6

No. of Inputs:

1

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP14,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Maximum Power Supply Current (ICC):

.02 mA

Propagation Delay At Nominal Supply:

12 ns

Propagation Delay (tpd):

18 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.75 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

2.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

3.9 mm

Trade Compliance

SN74LV04ADRG4 Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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