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SN74LV00ADRE4

Texas Instruments

SN74LV00ADRE4 by Texas Instruments

SN74LV00ADRE4 by Texas Instruments is a CMOS logic gate with 4 functions and 2 inputs. It has a propagation delay of 13 ns at 2.5V, making it suitable for automotive applications requiring fast response times. With a small outline package style and surface mount capability, it is ideal for compact electronic designs in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Chip Stock

USA . 31,070 parts In-Stock

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Vyrian

USA . 4,986 parts In-Stock

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Digiode

USA . 4,507 parts In-Stock

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Nova Conductors

Japan . 22 parts In-Stock

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One Stop Electronics

USA . 282 parts In-Stock

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$14.000

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282

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AZTECH Wire

Italy . 629 parts In-Stock

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$17.618

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Parana Technologies

USA . 389 parts In-Stock

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$18.200

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$18.341

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389

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DigiPath Technology Company

USA . 915 parts In-Stock

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$20.041

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915

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ChromeModa Solutions

Germany . 5,186 parts In-Stock

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$20.450

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$16.769

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IDEA Electronic Components Group

UK . 1,615 parts In-Stock

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$20.450

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$19.428

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$18.405

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Ampacity Inc.

Singapore . 1,523 parts In-Stock

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$39.000

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Corphita

USA . 4,363 parts In-Stock

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Microchip USA

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Aranea Global

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Overview

Elevate your projects with the SN74LV00ADRE4 by Texas Instruments, a high-quality logic gate that delivers reliable performance and precision engineering. Manufactured by industry leader Texas Instruments, this versatile component is perfect for a wide range of applications. With its fast propagation delay and low power consumption, the SN74LV00ADRE4 offers unmatched value and efficiency for your designs. Trust in Texas Instruments for superior quality and innovation in every product.

Feature Benefit Bullets

Propagation Delay At Nominal Supply: 13 ns

Low propagation delay ensures fast signal processing, making this product ideal for applications requiring quick response times.

No. of Functions: 4

Having multiple functions in a single device increases efficiency and reduces the need for additional components, making it a cost-effective solution.

No. of Inputs: 2

Having two inputs allows for basic Boolean logic operations, providing versatility in designing various digital circuits.

Nominal Supply Voltage / Vsup (V): 2.5

Operating at a low supply voltage of 2.5V helps in reducing power consumption and heat dissipation, making it suitable for battery-powered devices.

Output Characteristics: 3-STATE

The 3-state output allows the logic gate to drive bus lines, providing flexibility in connecting multiple devices and enabling tri-state logic implementation.

Technical Specifications

Logic Gates SN74LV00ADRE4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

LV/LV-A/LVX/H

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Length:

8.65 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

12 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

4

No. of Inputs:

2

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP14,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Maximum Power Supply Current (ICC):

.02 mA

Propagation Delay At Nominal Supply:

13 ns

Propagation Delay (tpd):

20 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.75 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

2.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

3.9 mm

Trade Compliance

SN74LV00ADRE4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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