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SN74AHC04PWRE4

Texas Instruments

SN74AHC04PWRE4 by Texas Instruments

SN74AHC04PWRE4 by Texas Instruments is a logic gate inverter with 6 functions and 1 input. It has a propagation delay of 8.5 ns and operates at a nominal voltage of 3.3V. This IC is commonly used in automotive applications due to its small size, low power consumption, and high temperature tolerance.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Chip Stock

USA . 121,838 parts In-Stock

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Vyrian

USA . 8,641 parts In-Stock

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Digiode

USA . 4,947 parts In-Stock

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Nova Conductors

Japan . 46 parts In-Stock

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Corohmni

South Africa . 218 parts In-Stock

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$9.028

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$9.028

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AZTECH Wire

Italy . 536 parts In-Stock

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$10.075

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Parana Technologies

USA . 2,236 parts In-Stock

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$19.283

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$1,790.695

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$17.354

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DigiPath Technology Company

USA . 2,208 parts In-Stock

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$21.233

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ChromeModa Solutions

Germany . 5,633 parts In-Stock

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$21.666

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$17.766

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IDEA Electronic Components Group

UK . 1,111 parts In-Stock

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$21.666

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$20.583

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$19.499

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1,111

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Ampacity Inc.

Singapore . 1,290 parts In-Stock

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$51.000

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One Stop Electronics

USA . 260 parts In-Stock

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Continental Prestige Electronics

USA . 6,938 parts In-Stock

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Corphita

USA . 2,902 parts In-Stock

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Microchip USA

USA . 2,832 parts In-Stock

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Argo Parts USA

USA . 2,734 parts In-Stock

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Bastille Electronics

Australia . 200 parts In-Stock

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Overview

Discover the SN74AHC04PWRE4 by Texas Instruments, a high-quality logic gate that delivers exceptional performance and reliability. With its small outline and thin profile, this compact device is perfect for various applications in automotive technology. Offering six functions and a quick propagation delay of only 8.5 ns, this inverter is designed to provide efficient and accurate signal processing. Benefit from Texas Instruments' renowned expertise and experience in semiconductor manufacturing, and unlock the full potential of your projects with the SN74AHC04PWRE4.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the logic gates, ensuring long-lasting performance.

Propagation Delay At Nominal Supply: 8.5 ns

A low propagation delay means fast signal processing, making this product suitable for applications where speed is crucial.

Surface Mount: YES

The surface mount feature allows for easy and secure installation on circuit boards, reducing assembly time and improving reliability.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a moderate supply voltage of 3.3V makes this product compatible with a wide range of applications and power sources.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this product can withstand harsh environmental conditions, making it suitable for industrial and automotive use.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making this product energy-efficient and reliable for various electronic systems.

Technical Specifications

Logic Gates SN74AHC04PWRE4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Additional Features:

IT CAN ALSO OPERATE AT 5 V NOMINAL

Family:

AHC/VHC/H/U/V

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Length:

5 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

6

No. of Inputs:

1

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP14,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/5.5

Maximum Power Supply Current (ICC):

.02 mA

Propagation Delay At Nominal Supply:

8.5 ns

Propagation Delay (tpd):

13 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.2 mm

Sub-Category:

Gate

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

4.4 mm

Trade Compliance

SN74AHC04PWRE4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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