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SN74AHC02RGYRG4

Texas Instruments

SN74AHC02RGYRG4 by Texas Instruments

SN74AHC02RGYRG4 by Texas Instruments is a CMOS logic gate with 4 functions and 2 inputs. It has a propagation delay of 8.5 ns at 3.3V, suitable for automotive applications due to its wide operating temperature range of -40 to 125°C and low power consumption of 0.02 mA.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,723 parts In-Stock

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Digiode

USA . 3,755 parts In-Stock

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3,755

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Distributors (Availability)

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AZTECH Wire

Italy . 785 parts In-Stock

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$15.022

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785

$15.022

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Parana Technologies

USA . 1,246 parts In-Stock

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$23.120

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$23.754

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$23.754

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DigiPath Technology Company

USA . 1,713 parts In-Stock

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$25.457

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1,713

$25.457

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ChromeModa Solutions

Germany . 4,336 parts In-Stock

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$25.977

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$21.301

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4,336

$25.977

$21.301

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IDEA Electronic Components Group

UK . 1,588 parts In-Stock

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$25.977

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$24.678

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$23.379

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1,588

$25.977

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One Stop Electronics

USA . 995 parts In-Stock

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$28.000

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995

$28.000

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Microchip USA

USA . 2,906 parts In-Stock

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Corphita

USA . 2,354 parts In-Stock

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Overview

Unlock the power of advanced logic gates with the SN74AHC02RGYRG4 by Texas Instruments. Known for their superior quality and reliability, Texas Instruments delivers cutting-edge technology in every product they produce. As a key component in various applications, including automotive systems and consumer electronics, this logic gate offers lightning-fast propagation delay and low power consumption. Experience seamless performance and unmatched efficiency with the SN74AHC02RGYRG4, providing exceptional value and innovation to customers in need of top-notch logic gate solutions.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material makes the package durable and resistant to external elements, ensuring the longevity of the product.

Propagation Delay At Nominal Supply: 8.5 ns

Low propagation delay ensures quick response time and efficient operation of the logic gates.

Surface Mount: YES

Surface mount capability allows for easy installation and integration into various electronic circuits and devices.

Nominal Supply Voltage / Vsup (V): 3.3

Operates efficiently at 3.3V, making it suitable for a wide range of applications while maintaining energy efficiency.

Maximum Operating Temperature: 125 °C

Ability to operate at high temperatures makes it suitable for use in automotive and industrial environments where temperatures can vary.

Technology: CMOS

CMOS technology ensures low power consumption and high noise immunity, ideal for reliable and efficient logic gate operation.

Technical Specifications

Logic Gates SN74AHC02RGYRG4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

AHC/VHC/H/U/V

JESD-30 Code:

S-PQCC-N14

JESD-609 Code:

e4

Length:

3.5 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

8 Amp

Moisture Sensitivity Level (MSL):

2

No. of Functions:

4

No. of Inputs:

2

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC14/18,.14SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/5.5

Maximum Power Supply Current (ICC):

.02 mA

Propagation Delay At Nominal Supply:

8.5 ns

Propagation Delay (tpd):

13 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

3.5 mm

Trade Compliance

SN74AHC02RGYRG4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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