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SN74ACT10NSR

Texas Instruments

SN74ACT10NSR by Texas Instruments

SN74ACT10NSR by Texas Instruments is a logic gate with 3 functions and inputs, offering a propagation delay of 10ns at 5V. This CMOS technology device operates in industrial temperature range (-40 to 85°C) and has a max I (ol) of 24Amp. It is commonly used in applications requiring fast signal processing and low power consumption.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,511 parts In-Stock

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Digiode

USA . 3,307 parts In-Stock

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3,307

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Distributors (Availability)

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AZTECH Wire

Italy . 467 parts In-Stock

1+ parts

$6.080

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467

$6.080

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Parana Technologies

USA . 635 parts In-Stock

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$14.583

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-

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$15.020

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635

$14.583

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$15.020

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ChromeModa Solutions

Germany . 1,592 parts In-Stock

1+ parts

$16.385

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$13.436

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1,592

$16.385

$13.436

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IDEA Electronic Components Group

UK . 641 parts In-Stock

1+ parts

$16.385

100+ parts

$15.566

1k+ parts

$14.746

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641

$16.385

$15.566

$14.746

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One Stop Electronics

USA . 1,476 parts In-Stock

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$31.000

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1,476

$31.000

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DigiPath Technology Company

USA . 1,096 parts In-Stock

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$14.773

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$14.773

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Microchip USA

USA . 240 parts In-Stock

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Corphita

USA . 51 parts In-Stock

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Overview

Enhance your electronic designs with the SN74ACT10NSR by Texas Instruments, a top-notch logic gate that promises superior performance and reliability. Crafted by a trusted manufacturer known for their high-quality components, this product offers a seamless integration into a wide range of applications. With its fast propagation delay and low power consumption, customers can expect optimal efficiency and precision in their circuits. Trust in Texas Instruments to deliver cutting-edge technology that never compromises on quality.

Feature Benefit Bullets

Package Body Material - PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection for the components inside, ensuring a longer lifespan for the product.

Propagation Delay At Nominal Supply - 10 ns

Low propagation delay ensures fast operation and quick response times, making this logic gate suitable for high-speed applications.

Surface Mount - YES

Surface mount capability allows for easy and efficient installation on circuit boards, saving time and effort during assembly.

No. of Functions - 3

Having multiple functions in a single component reduces the need for additional components, saving space and simplifying circuit design.

Nominal Supply Voltage / Vsup (V) - 5

Operating at 5V nominal supply voltage makes this logic gate compatible with standard circuit configurations and power sources.

Maximum Operating Temperature - 85 °C

With a high maximum operating temperature of 85°C, this logic gate can reliably function in a variety of environmental conditions without overheating.

Technology - CMOS

CMOS technology offers low power consumption and high noise immunity, making this logic gate energy-efficient and reliable in noisy environments.

Technical Specifications

Logic Gates SN74ACT10NSR attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

ACT

JESD-30 Code:

R-PDSO-G14

Length:

10.2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

No. of Functions:

3

No. of Inputs:

3

No. of Terminals:

14

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP14,.3

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Packing Method:

TR

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Propagation Delay At Nominal Supply:

10 ns

Propagation Delay (tpd):

10 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

2 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

5.3 mm

Trade Compliance

SN74ACT10NSR Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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