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SN64BCT125DR

Texas Instruments

SN64BCT125DR by Texas Instruments

SN64BCT125DR by Texas Instruments is a 4-function bus driver with 3-STATE output, operating at a supply voltage range of 4.5V to 5.5V. It features a propagation delay of 8ns and can handle load capacitance up to 50pF. This industrial-grade device in small outline package is ideal for applications requiring high-speed signal transmission in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,552 parts In-Stock

1+ parts

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4,552

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Digiode

USA . 4,284 parts In-Stock

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4,284

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Andel Nordic

Denmark . 543 parts In-Stock

1+ parts

$8.074

100+ parts

-

1k+ parts

$7.752

10k+ parts

$7.752

543

$8.074

-

$7.752

$7.752

One Stop Electronics

USA . 209 parts In-Stock

1+ parts

$12.000

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209

$12.000

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AZTECH Wire

Italy . 234 parts In-Stock

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$15.295

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234

$15.295

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Parana Technologies

USA . 1,649 parts In-Stock

1+ parts

$18.518

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$18.629

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1,649

$18.518

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$18.629

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DigiPath Technology Company

USA . 881 parts In-Stock

1+ parts

$20.391

100+ parts

$18.760

1k+ parts

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881

$20.391

$18.760

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ChromeModa Solutions

Germany . 562 parts In-Stock

1+ parts

$20.807

100+ parts

$17.062

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562

$20.807

$17.062

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IDEA Electronic Components Group

UK . 242 parts In-Stock

1+ parts

$20.807

100+ parts

$19.767

1k+ parts

$18.726

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242

$20.807

$19.767

$18.726

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Corphita

USA . 4,423 parts In-Stock

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Overview

Enhance your electronic projects with the SN64BCT125DR by Texas Instruments, a top-tier bus driver & transceiver that offers unmatched quality and reliability. With a focus on innovation and precision engineering, Texas Instruments ensures that this product delivers exceptional performance in a variety of applications. Whether you're working on robotics, automation, or communication systems, this versatile component will provide value by optimizing signal transmission, reducing power consumption, and enhancing overall system efficiency. Invest in the best with Texas Instruments and elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the bus driver & transceivers.

Surface Mount: YES

Enables easy and efficient installation on a circuit board.

No. of Functions: 4

Offers multiple functions in a single component, reducing space and complexity in the circuit design.

Nominal Supply Voltage / Vsup (V): 5

Works efficiently on a standard 5V power supply, commonly used in many electronic systems.

Load Capacitance (CL): 50 pF

Optimized for handling a typical load capacitance in electronic circuits.

No. of Terminals: 14

Provides multiple connection points, allowing for versatile integration within a circuit.

Propagation Delay (tpd): 8 ns

Offers fast signal processing and transmission, making it ideal for time-sensitive applications.

Output Characteristics: 3-STATE

Allows for high impedance output state when disabled, preventing interference with other components.

Temperature Grade: INDUSTRIAL

Suitable for deployment in industrial environments with wide temperature ranges.

Technology: BICMOS

Combines the advantages of both bipolar and CMOS technologies, offering high performance and low power consumption.

Technical Specifications

Bus Driver & Transceivers SN64BCT125DR attributes and parameters. Explore more Bus Driver & Transceivers devices from Texas Instruments

Specs

Family:

BCT/FBT

JESD-30 Code:

R-PDSO-G14

Length:

8.65 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

No. of Bits:

1

No. of Functions:

4

No. of Ports:

2

No. of Terminals:

14

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

3-STATE

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Power Supply Current (ICC):

49 mA

Propagation Delay (tpd):

8 ns

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

BICMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

3.9 mm

Trade Compliance

SN64BCT125DR Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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