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SN10KHT5542DWR

Texas Instruments

SN10KHT5542DWR by Texas Instruments

SN10KHT5542DWR by Texas Instruments is a voltage level translator with 8 functions, operating at supply voltages of 4.5V to 5.5V. It features TTL to ECL translation, with a max delay of 3.7ns and operates in commercial temperature grades. This IC is ideal for applications requiring inverted output polarity and standard input characteristics in a small outline package style.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,200 parts In-Stock

1+ parts

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7,200

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Digiode

USA . 2,048 parts In-Stock

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2,048

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 9 parts In-Stock

1+ parts

$7.314

100+ parts

-

1k+ parts

$7.807

10k+ parts

-

9

$7.314

-

$7.807

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ChromeModa Solutions

Germany . 5,388 parts In-Stock

1+ parts

$8.218

100+ parts

$6.739

1k+ parts

-

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5,388

$8.218

$6.739

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IDEA Electronic Components Group

UK . 275 parts In-Stock

1+ parts

$8.218

100+ parts

-

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$7.396

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275

$8.218

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$7.396

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AZTECH Wire

Italy . 827 parts In-Stock

1+ parts

$12.170

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827

$12.170

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One Stop Electronics

USA . 456 parts In-Stock

1+ parts

$33.500

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456

$33.500

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Corphita

USA . 3,887 parts In-Stock

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3,887

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DigiPath Technology Company

USA . 2,291 parts In-Stock

1+ parts

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100+ parts

$7.409

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2,291

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$7.409

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Overview

Elevate your voltage level translation needs with the SN10KHT5542DWR by Texas Instruments. This innovative product boasts top-notch quality and reliability from a trusted manufacturer, ensuring seamless performance in a variety of applications. Experience the value of smooth signal conversion and enhanced functionality, all while enjoying the benefits of superior design and efficiency. Upgrade to the SN10KHT5542DWR today and elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides a good balance of durability and cost-effectiveness, making the product suitable for various applications.

Maximum Supply Voltage: 5.5 V

With a high maximum supply voltage, this product can accommodate a wide range of input voltages, enhancing its versatility.

No. of Functions: 8

The product offers multiple functions in a single package, providing efficiency and saving space on the circuit board.

Minimum Operating Temperature: 0 °C

The product can operate at low temperatures, making it suitable for use in diverse environments.

Maximum Delay: 3.7 ns

With a low maximum delay, this product offers fast signal translation, ensuring smooth and efficient operation in the circuit.

Technical Specifications

Voltage Level Translators SN10KHT5542DWR attributes and parameters. Explore more Voltage Level Translators devices from Texas Instruments

Specs

Maximum Delay:

3.7 ns

Input Characteristics:

STANDARD

Interface IC Type:

JESD-30 Code:

R-PDSO-G24

Length:

15.4 mm

Nominal Negative Supply Voltage:

-5.2 V

No. of Bits:

1

No. of Functions:

8

No. of Terminals:

24

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Output Characteristics:

OPEN-EMITTER

Output Latch/Register:

NONE

Output Polarity:

INVERTED

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP24,.4

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5,-5.2

Qualification:

Not Qualified

Maximum Seated Height:

2.65 mm

Sub-Category:

Level Translators

Maximum Supply Current:

25 mA

Maximum Supply Voltage:

5.5 V

Minimum Supply Voltage:

4.5 V

Nominal Supply Voltage:

5 V

Surface Mount:

YES

Technology:

BIPOLAR

Temperature Grade:

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

7.5 mm

Trade Compliance

SN10KHT5542DWR Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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