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S5LS20206ASGWTMEP

Texas Instruments

S5LS20206ASGWTMEP by Texas Instruments

Texas Instruments S5LS20206ASGWTMEP microcontroller features 32-bit CPU, 22-bit address bus, and 8-bit on-chip data RAM. Ideal for military applications with MIL-STD temperature range, it offers peripherals like CRC, DMA(16), TIMER(32), WDT for robust performance in harsh environments. With low power mode and multiple connectivity options (CAN, LIN, SPI, UART), it ensures efficient operation in diverse scenarios.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 9,532 parts In-Stock

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Digiode

USA . 611 parts In-Stock

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611

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AZTECH Wire

Italy . 827 parts In-Stock

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$5.718

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One Stop Electronics

USA . 1,390 parts In-Stock

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$11.000

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Parana Technologies

USA . 1,979 parts In-Stock

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$26.369

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$26.962

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DigiPath Technology Company

USA . 1,896 parts In-Stock

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$29.035

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ChromeModa Solutions

Germany . 5,313 parts In-Stock

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$29.628

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$24.295

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IDEA Electronic Components Group

UK . 1,477 parts In-Stock

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$29.628

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$28.147

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$26.665

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Advanced Electronics

New Zealand . 700 parts In-Stock

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$41.003

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$37.313

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$33.622

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Microchip USA

USA . 1,575 parts In-Stock

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$105.520

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$103.680

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$102.760

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$101.850

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$101.850

Corphita

USA . 778 parts In-Stock

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Overview

Unlock endless possibilities with the S5LS20206ASGWTMEP microcontroller by Texas Instruments. Designed with precision and expertise, this state-of-the-art device offers unparalleled performance in a wide range of applications. From automotive to industrial automation, this microcontroller provides efficient processing power and advanced connectivity options. Experience the reliability and innovation that Texas Instruments is known for, and elevate your projects to new heights with the S5LS20206ASGWTMEP. Discover the difference quality makes in every detail.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the microcontroller, ensuring long-term reliability.

Maximum Supply Voltage: 1.65 V

Allows for flexibility in power supply options while ensuring safe operation.

Address Bus Width: 22

Allows for efficient memory addressing, enabling the microcontroller to process data effectively.

CPU Family: CORTEX-R4F

Utilizes a powerful CPU architecture for high-performance computing tasks.

ROM Words: 2097152

Provides ample storage space for program instructions, enabling complex applications to be executed smoothly.

Maximum Clock Frequency: 20 MHz

Offers fast processing speeds for quick response times in applications.

ADC Channels: YES

Enables analog-to-digital conversion for accurate measurement and control of external signals.

Connectivity: CAN(3), LIN, SPI(3), UART(2)

Supports a variety of communication protocols, allowing for seamless integration with other devices.

Peripheral IC Type: MICROCONTROLLER, RISC

Employs a reduced instruction set computing (RISC) architecture for efficient data processing and control.

Low Power Mode: YES

Helps conserve energy and extend battery life in power-sensitive applications.

Technical Specifications

Microcontrollers S5LS20206ASGWTMEP attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

22

Bit Size:

32

Boundary Scan:

YES

CPU Family:

CORTEX-R4F

Maximum Clock Frequency:

20 MHz

DAC Channels:

NO

DMA Channels:

YES

External Data Bus Width:

16

Format:

FLOATING POINT

Integrated Cache:

NO

JESD-30 Code:

S-PBGA-B337

JESD-609 Code:

e0

Length:

16 mm

Low Power Mode:

YES

Moisture Sensitivity Level (MSL):

3

No. of DMA Channels:

16

No. of External Interrupts:

0

No. of I/O Lines:

115

No. of Serial I/Os:

7

No. of Terminals:

337

No. of Timers:

32

On Chip Data RAM Width:

8

On Chip Program ROM Width:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Peak Reflow Temperature (C):

220

RAM Bytes:

167772160

ROM Words:

2097152

ROM Programmability:

FLASH

Maximum Seated Height:

1.4 mm

Speed:

160 rpm

Maximum Supply Current:

580 mA

Maximum Supply Voltage:

1.65 V

Minimum Supply Voltage:

1.35 V

Nominal Supply Voltage:

1.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

20

Width:

16 mm

Peripheral IC Type:

Data EEPROM Size:

0

Connectivity:

CAN(3), LIN, SPI(3), UART(2)

Peripherals:

CRC, DMA(16), TIMER(32), WDT

Analog To Digital Convertors:

24-Ch 12-Bit (2)

Trade Compliance

S5LS20206ASGWTMEP Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A001.A.2.C

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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