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ONET2591TAYS

Texas Instruments

ONET2591TAYS by Texas Instruments

ONET2591TAYS by Texas Instruments is a telecom IC with 11 terminals, operating at temperatures from -40 to 85°C. It has a supply voltage of 3.3V and low current consumption of 0.023mA, suitable for industrial applications requiring telecom circuit interfaces in surface-mount packages.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,009 parts In-Stock

1+ parts

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2,009

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Digiode

USA . 1,770 parts In-Stock

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1,770

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 798 parts In-Stock

1+ parts

$6.854

100+ parts

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798

$6.854

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Advanced Electronics

New Zealand . 1,000 parts In-Stock

1+ parts

$10.182

100+ parts

$10.080

1k+ parts

$9.673

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1,000

$10.182

$10.080

$9.673

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Parana Technologies

USA . 1,385 parts In-Stock

1+ parts

$10.433

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-

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$10.945

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1,385

$10.433

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$10.945

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DigiPath Technology Company

USA . 1,659 parts In-Stock

1+ parts

$11.488

100+ parts

$10.569

1k+ parts

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1,659

$11.488

$10.569

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ChromeModa Solutions

Germany . 1,303 parts In-Stock

1+ parts

$11.722

100+ parts

$9.612

1k+ parts

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1,303

$11.722

$9.612

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IDEA Electronic Components Group

UK . 1,017 parts In-Stock

1+ parts

$11.722

100+ parts

$11.136

1k+ parts

$10.550

10k+ parts

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1,017

$11.722

$11.136

$10.550

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One Stop Electronics

USA . 642 parts In-Stock

1+ parts

$934.000

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642

$934.000

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Corphita

USA . 2,455 parts In-Stock

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2,455

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Microchip USA

USA . 240 parts In-Stock

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240

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Overview

Unlock the power of seamless communication with the ONET2591TAYS by Texas Instruments. Manufactured by a trusted industry leader, this telecom interface IC offers unparalleled quality and reliability. Ideal for a variety of applications within the telecom sector, this product boasts a range of benefits including low power consumption, high temperature tolerance, and easy surface mount installation. Trust Texas Instruments to deliver cutting-edge solutions that exceed your expectations. Experience the difference with the ONET2591TAYS.

Feature Benefit Bullets

Surface Mount: YES

Surface mount technology allows for easy and efficient printed circuit board assembly, saving time and cost during manufacturing.

Power Supplies (V): 3.3

Operating at a standard voltage of 3.3V ensures compatibility with common power sources in telecom applications.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85°C, this product can withstand heat and operate reliably in various industrial environments.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40°C ensures functionality in cold conditions, making it suitable for a wide range of operating environments.

Telecom IC Type: TELECOM CIRCUIT

Designed specifically for telecom applications, this IC type offers optimized performance and functionality for telecommunication systems.

Technical Specifications

Other Function Telecom Interface ICs ONET2591TAYS attributes and parameters. Explore more Other Function Telecom Interface ICs devices from Texas Instruments

Specs

JESD-30 Code:

R-XUUC-N11

No. of Functions:

1

No. of Terminals:

11

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Code:

DIE

Package Equivalence Code:

DIE OR CHIP

Package Shape:

Package Style (Meter):

UNCASED CHIP

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3.3

Qualification:

Not Qualified

Sub-Category:

Other Telecom ICs

Maximum Supply Current:

.023 mA

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Telecom IC Type:

Temperature Grade:

Terminal Form:

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

ONET2591TAYS Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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