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ONET8501VRGPTG4

Texas Instruments

ONET8501VRGPTG4 by Texas Instruments

ONET8501VRGPTG4 by Texas Instruments is a telecom interface IC with 20 terminals in a square chip carrier package. Operating temperature range from -40 to 85°C, supporting circuits at 3.3V supply voltage. Ideal for industrial applications requiring surface mount technology and very thin profile packaging.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 9,930 parts In-Stock

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Vyrian

USA . 5,028 parts In-Stock

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5,028

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Digiode

USA . 511 parts In-Stock

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511

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AZTECH Wire

Italy . 310 parts In-Stock

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$7.420

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310

$7.420

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Parana Technologies

USA . 1,430 parts In-Stock

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$15.296

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$15.689

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1,430

$15.296

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$15.689

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ChromeModa Solutions

Germany . 2,103 parts In-Stock

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$17.186

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$14.093

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2,103

$17.186

$14.093

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IDEA Electronic Components Group

UK . 2,011 parts In-Stock

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$17.186

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$16.327

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$15.467

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2,011

$17.186

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$15.467

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One Stop Electronics

USA . 228 parts In-Stock

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$32.000

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228

$32.000

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Ampacity Inc.

Singapore . 1,525 parts In-Stock

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$638.000

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$638.000

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Semicontronic

India . 949 parts In-Stock

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$853.000

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$831.675

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$827.410

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949

$853.000

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$827.410

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Corphita

USA . 4,572 parts In-Stock

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Perfect Parts

USA . 896 parts In-Stock

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Corohmni

South Africa . 130 parts In-Stock

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DigiPath Technology Company

USA . 57 parts In-Stock

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$15.495

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$15.495

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Overview

Elevate your telecom interface circuits with the ONET8501VRGPTG4 by Texas Instruments. Crafted with precision and quality in mind, this advanced IC offers unparalleled performance and reliability. Ideal for a wide range of applications, this chip carrier package boasts a very thin profile, nickel palladium gold terminal finish, and industrial-grade temperature tolerance. Experience seamless integration and enhanced functionality with this innovative solution. Upgrade your systems with Texas Instruments today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes this product lightweight and durable, ideal for telecommunications applications.

Surface Mount: YES

Being surface mountable allows for easier and more efficient integration into circuit boards, saving space and increasing overall design flexibility.

Package Shape: SQUARE

The square package shape helps in efficient use of board space and allows for easier arrangement in compact designs.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85°C, this product can withstand demanding telecom environments without performance degradation.

Nominal Supply Voltage: 3.3 V

The 3.3V nominal supply voltage is commonly used in telecom applications, ensuring compatibility with existing systems and power sources.

Technical Specifications

Other Function Telecom Interface ICs ONET8501VRGPTG4 attributes and parameters. Explore more Other Function Telecom Interface ICs devices from Texas Instruments

Specs

JESD-30 Code:

S-PQCC-N20

JESD-609 Code:

e4

Length:

4 mm

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

20

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Telecom IC Type:

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

4 mm

Trade Compliance

ONET8501VRGPTG4 Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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