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LMH2120UMX

Texas Instruments

LMH2120UMX by Texas Instruments

LMH2120UMX by Texas Instruments is a Cellphone IC with RF and baseband circuit. It features 6 terminals in a rectangular grid array package style, suitable for telecom applications. Operating temperature ranges from -40 to 85°C, making it ideal for industrial use.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,857 parts In-Stock

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Anansix

USA . 2,538 parts In-Stock

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Digiode

USA . 1,548 parts In-Stock

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Parana Technologies

USA . 607 parts In-Stock

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$15.890

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$16.245

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607

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AZTECH Wire

Italy . 388 parts In-Stock

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$16.340

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DigiPath Technology Company

USA . 1,248 parts In-Stock

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$17.497

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$16.097

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ChromeModa Solutions

Germany . 5,617 parts In-Stock

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$17.854

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$14.640

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IDEA Electronic Components Group

UK . 285 parts In-Stock

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$17.854

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$16.961

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$16.069

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One Stop Electronics

USA . 229 parts In-Stock

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$586.000

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A-Z Elektronik GmbH

Germany . 5,788 parts In-Stock

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Corphita

USA . 4,242 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,185 parts In-Stock

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Kepictronics

USA . 3,000 parts In-Stock

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Authorized Procurement Solutions

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Overview

Enhance the performance of your cellphone with the LMH2120UMX by Texas Instruments. Known for their top-quality products, Texas Instruments delivers reliable solutions for cellphone ICs. This versatile component offers a wide range of applications, from enhancing RF circuits to optimizing baseband circuits. With its compact package and industrial temperature grade, the LMH2120UMX provides value and efficiency for your device. Upgrade your cellphone's capabilities with this innovative IC today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the package lightweight and durable, perfect for use in cellphone ICs where space and weight are important factors.

Surface Mount: YES

Surface mount technology allows for easy and efficient assembly, making the cellphone ICs more cost-effective to manufacture.

Package Shape: RECTANGULAR

The rectangular shape is space-efficient and easily stackable, allowing for compact design and maximizing board space in the cellphone ICs.

No. of Terminals: 6

Having only 6 terminals simplifies the design and integration of the cellphone ICs, reducing complexity and potential points of failure.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85°C, these cellphone ICs can withstand extended use and high-performance applications without overheating.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40°C ensures that the cellphone ICs can function reliably even in extreme cold environments.

Telecom IC Type: RF AND BASEBAND CIRCUIT

This specific telecom IC type ensures that the cellphone ICs can handle both RF signals and baseband processing, making them versatile and suitable for various communication tasks.

Nominal Supply Voltage: 2.7 V

The low nominal supply voltage of 2.7V helps in minimizing power consumption and extending battery life in the cellphones where these ICs are used.

Technical Specifications

Cellphone ICs LMH2120UMX attributes and parameters. Explore more Cellphone ICs devices from Texas Instruments

Specs

JESD-30 Code:

R-PBGA-B6

Length:

1.225 mm

No. of Functions:

1

No. of Terminals:

6

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Qualification:

Not Qualified

Maximum Seated Height:

.47 mm

Nominal Supply Voltage:

2.7 V

Surface Mount:

YES

Telecom IC Type:

Temperature Grade:

Terminal Form:

Terminal Pitch:

.4 mm

Terminal Position:

BOTTOM

Width:

.825 mm

Trade Compliance

LMH2120UMX Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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