Loading...

DRV8353RFSRGZR

Texas Instruments

DRV8353RFSRGZR by Texas Instruments

DRV8353RFSRGZR by Texas Instruments is a MOSFET gate driver with a max supply voltage of 75V, suitable for automotive applications. It features a push-pull output polarity and high side driver, with turn-on/off times of 1000us. This chip carrier package has 48 terminals and operates in temperatures ranging from -40 to 125°C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,616 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,616

-

-

-

-

Digiode

USA . 1,427 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,427

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 753 parts In-Stock

1+ parts

$5.500

100+ parts

-

1k+ parts

-

10k+ parts

-

753

$5.500

-

-

-

Parana Technologies

USA . 1,009 parts In-Stock

1+ parts

$6.962

100+ parts

-

1k+ parts

$7.542

10k+ parts

-

1,009

$6.962

-

$7.542

-

DigiPath Technology Company

USA . 1,959 parts In-Stock

1+ parts

$7.667

100+ parts

-

1k+ parts

-

10k+ parts

-

1,959

$7.667

-

-

-

ChromeModa Solutions

Germany . 3,971 parts In-Stock

1+ parts

$7.823

100+ parts

$6.415

1k+ parts

-

10k+ parts

-

3,971

$7.823

$6.415

-

-

IDEA Electronic Components Group

UK . 2,127 parts In-Stock

1+ parts

$7.823

100+ parts

-

1k+ parts

$7.041

10k+ parts

-

2,127

$7.823

-

$7.041

-

AZTECH Wire

Italy . 470 parts In-Stock

1+ parts

$16.666

100+ parts

-

1k+ parts

-

10k+ parts

-

470

$16.666

-

-

-

Semicontronic

India . 1,201 parts In-Stock

1+ parts

$20.500

100+ parts

$19.988

1k+ parts

$19.885

10k+ parts

-

1,201

$20.500

$19.988

$19.885

-

One Stop Electronics

USA . 376 parts In-Stock

1+ parts

$46.500

100+ parts

-

1k+ parts

-

10k+ parts

-

376

$46.500

-

-

-

Microchip USA

USA . 2,260 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,260

-

-

-

-

Corphita

USA . 1,118 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,118

-

-

-

-

Northwest PG Solutions

USA . 497 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

497

-

-

-

-

Native Components

USA . 383 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

383

-

-

-

-

Corohmni

South Africa . 371 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

371

-

-

-

-

Overview

Experience high-quality performance and reliability with the DRV8353RFSRGZR MOSFET Gate Driver from Texas Instruments. This innovative product offers exceptional value and benefits to customers in a wide range of applications. From automotive systems to industrial automation, this driver provides efficient output characteristics and true output polarity for seamless operation. Trust in Texas Instruments' reputation for excellence and choose the DRV8353RFSRGZR for all your gate driver needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, suitable for various applications.

Surface Mount: YES

Being surface mountable, it simplifies the assembly process and makes it easier to integrate into electronic circuits.

Maximum Supply Voltage: 75 V

With a high maximum supply voltage, this gate driver can handle a wide range of power requirements in different applications.

Package Shape: SQUARE

The square package shape allows for easy placement and mounting in circuit designs.

No. of Terminals: 48

Having a high number of terminals enables connectivity to multiple components, enhancing flexibility in circuit design.

Terminal Finish: NICKEL PALLADIUM GOLD SILVER

The use of multiple high-quality finishes on the terminals ensures good conductivity and reliability in connections.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature makes the gate driver suitable for demanding environments and applications where heat dissipation is crucial.

Output Characteristics: PUSH-PULL

The push-pull output characteristics provide efficient and reliable switching performance for driving MOSFETs.

Width: 7 mm

The compact width of the package allows for space-saving installation in tight circuit layouts.

Nominal Output Peak Current Limit: 2 A

The high nominal output peak current limit ensures sufficient power handling capability for driving MOSFETs.

Technical Specifications

MOSFET Gate Drivers DRV8353RFSRGZR attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

YES

Input Characteristics:

STANDARD

Interface IC Type:

JESD-30 Code:

S-PQCC-N48

JESD-609 Code:

e4

Length:

7 mm

Moisture Sensitivity Level (MSL):

2

No. of Functions:

1

No. of Terminals:

48

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

PUSH-PULL

Nominal Output Peak Current Limit:

2 A

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC48,.27SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Maximum Seated Height:

.8 mm

Maximum Supply Current:

13 mA

Maximum Supply Voltage:

75 V

Minimum Supply Voltage:

9 V

Nominal Supply Voltage:

10 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD SILVER

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Turn-off Time:

1000 us

Turn-on Time:

1000 us

Width:

7 mm

Trade Compliance

DRV8353RFSRGZR Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

New products
from Texas Instruments 7

Similar products 20