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DRA718BJGCBDQ1

Texas Instruments

DRA718BJGCBDQ1 by Texas Instruments

DRA718BJGCBDQ1 by Texas Instruments is a multi-functional peripheral with 16-bit address bus width, 32-bit external data bus width, and max clock frequency of 38.4 MHz. Ideal for automotive applications, it features a low profile grid array package with 538 terminals and supports various bus compatibilities like CAN, Ethernet, I2C, IRDA, PCI, SPI, UART, and USB.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,963 parts In-Stock

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Digiode

USA . 2,340 parts In-Stock

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2,340

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Distributors (Availability)

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AZTECH Wire

Italy . 316 parts In-Stock

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$11.450

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316

$11.450

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One Stop Electronics

USA . 1,402 parts In-Stock

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$23.000

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$23.000

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Parana Technologies

USA . 176 parts In-Stock

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$53.720

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$53.720

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DigiPath Technology Company

USA . 208 parts In-Stock

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$59.153

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208

$59.153

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ChromeModa Solutions

Germany . 2,423 parts In-Stock

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$60.360

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$49.495

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$60.360

$49.495

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IDEA Electronic Components Group

UK . 1,340 parts In-Stock

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$60.360

100+ parts

$57.342

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$54.324

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$60.360

$57.342

$54.324

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Corohmni

South Africa . 3,188 parts In-Stock

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$61.035

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$61.035

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Corphita

USA . 3,177 parts In-Stock

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Microchip USA

USA . 2,149 parts In-Stock

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Northwest PG Solutions

USA . 1,381 parts In-Stock

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Native Components

USA . 133 parts In-Stock

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Overview

Experience the cutting-edge innovation of the DRA718BJGCBDQ1 by Texas Instruments, a top-tier manufacturer in the industry. This multi-functional peripheral device is designed to exceed expectations with its exceptional quality and performance. Ideal for automotive applications, this product offers unparalleled reliability and efficiency. With a wide range of compatibility options including CAN, Ethernet, I2C, IrDA, PCI, SPI, UART, and USB, the DRA718BJGCBDQ1 provides customers with versatile solutions for their specific needs. Trust Texas Instruments to deliver superior technology that simplifies and enhances your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy in the package body material makes the product lightweight and durable, making it suitable for use in various applications.

Maximum Supply Voltage: 1.2 V

The maximum supply voltage of 1.2V allows for efficient power consumption and operation of the device without exceeding the voltage limit.

Screening Level: AEC-Q100

With AEC-Q100 screening level, the product meets automotive industry standards for reliability and quality, ensuring it can withstand harsh operating conditions.

RAM Words: 512K

Having 512K RAM words allows for sufficient memory capacity to handle multiple tasks and data processing efficiently.

Technology: CMOS

The use of CMOS technology ensures low power consumption and high-speed performance, making the product energy-efficient and reliable.

Technical Specifications

Multi-functional Peripherals DRA718BJGCBDQ1 attributes and parameters. Explore more Multi-functional Peripherals devices from Texas Instruments

Specs

Address Bus Width:

16

Boundary Scan:

YES

Bus Compatibility:

CAN; ETHERNET; I2C; IRDA; PCI; SPI; UART; USB

Maximum Clock Frequency:

38.4 MHz

External Data Bus Width:

32

JESD-30 Code:

S-PBGA-B538

JESD-609 Code:

e1

Length:

17 mm

Moisture Sensitivity Level (MSL):

3

No. of I/O Lines:

186

No. of Terminals:

538

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

RAM Words:

512K

Screening Level:

AEC-Q100

Maximum Seated Height:

1.298 mm

Speed:

1000 rpm

Maximum Supply Voltage:

1.2 V

Minimum Supply Voltage:

1.11 V

Nominal Supply Voltage:

1.15 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

17 mm

Trade Compliance

DRA718BJGCBDQ1 Peripheral ICs trade compliance attributes, and parameters.

ECCN

5A992.C

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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