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BUF07702PWPG4

Texas Instruments

BUF07702PWPG4 by Texas Instruments

BUF07702PWPG4 by Texas Instruments is a 20-terminal buffer amplifier with a max input offset voltage of 15000uV and nominal bandwidth of 1MHz. It operates b/w 0-85°C, suitable for applications requiring low bias current amplification in compact designs. The surface-mount package with a small outline and thin profile makes it ideal for space-constrained electronic systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,181 parts In-Stock

1+ parts

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5,181

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Digiode

USA . 3,442 parts In-Stock

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3,442

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Distributors (Availability)

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One Stop Electronics

USA . 388 parts In-Stock

1+ parts

$6.410

100+ parts

-

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388

$6.410

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Parana Technologies

USA . 1,966 parts In-Stock

1+ parts

$6.525

100+ parts

-

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$7.267

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1,966

$6.525

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$7.267

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DigiPath Technology Company

USA . 269 parts In-Stock

1+ parts

$7.184

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269

$7.184

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ChromeModa Solutions

Germany . 3,391 parts In-Stock

1+ parts

$7.331

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$6.011

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3,391

$7.331

$6.011

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IDEA Electronic Components Group

UK . 2,308 parts In-Stock

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$7.331

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$6.598

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2,308

$7.331

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$6.598

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Native Components

USA . 799 parts In-Stock

1+ parts

$8.265

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799

$8.265

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Northwest PG Solutions

USA . 1,132 parts In-Stock

1+ parts

$9.091

100+ parts

$8.182

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1,132

$9.091

$8.182

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AZTECH Wire

Italy . 316 parts In-Stock

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$10.857

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316

$10.857

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Corphita

USA . 1,260 parts In-Stock

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1,260

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Microchip USA

USA . 249 parts In-Stock

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Overview

Enhance your electronic designs with the BUF07702PWPG4 by Texas Instruments, a top-tier manufacturer known for its quality and reliability. As a buffer amplifier, this versatile component is essential for signal buffering and impedance matching in various applications. Its small outline package and low power consumption make it ideal for compact and efficient circuit designs. Elevate your projects with the superior performance and precision of the BUF07702PWPG4, providing you with the value and benefits you need to succeed in today's competitive market.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection for the internal components of the buffer amplifier, ensuring a longer lifespan and reliability.

Maximum Input Offset Voltage: 15000 uV

Low input offset voltage ensures that the output signal closely follows the input signal, maintaining accuracy in signal amplification.

Maximum Average Bias Current (IIB): 0.0002 uA

Low bias current minimizes the impact of input currents on the amplifier's performance, resulting in consistent and stable output signals.

Surface Mount: YES

Surface mount capability allows for easy and convenient installation on PCBs, saving space and simplifying the assembly process.

Nominal Supply Voltage / Vsup (V): 10

The nominal supply voltage of 10V provides sufficient power for the buffer amplifier to operate effectively within its specified parameters.

Maximum Supply Voltage Limit: 16.5 V

High supply voltage limit offers flexibility in power requirements and allows for safe operation under varying voltage conditions.

Maximum Operating Temperature: 85 °C

Wide operating temperature range of up to 85°C ensures reliable performance in various environmental conditions.

Nominal Bandwidth (3dB): 1 MHz

The wide bandwidth of 1 MHz allows the buffer amplifier to amplify a broad range of input signals without distortion or signal loss.

Technical Specifications

Buffer Amplifiers BUF07702PWPG4 attributes and parameters. Explore more Buffer Amplifiers devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Total Functions:

1

Sub-Category:

Buffer Amplifiers

Performance Specifications

Nominal Bandwidth (3dB):

1 MHz

Nominal Slew Rate:

1 V/us

Input Offset Voltage Limit:

15 mV

Peak Bias Current:

200 pA

Operational Characteristics

Nominal Supply Voltage:

10 V

Maximum Supply Voltage:

16.5 V

Lowest Operating Temperature:

0 °C (32 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Physical Characteristics

Length:

0.256 in (6.5 mm)

Width:

0.173 in (4.4 mm)

Maximum Seated Height:

0.047 in (1.2 mm)

Total Terminals:

20

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Style:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G20

Packaging and Shipping

Package Code:

Package Shape:

Package Style:

Small Outline, Heat Sink/Slug, Thin Profile, Shrink Pitch

Trade Compliance

BUF07702PWPG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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