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BUF04701AIDGSRG4

Texas Instruments

BUF04701AIDGSRG4 by Texas Instruments

BUF04701AIDGSRG4 by Texas Instruments is a CMOS BUFFER with 8 MHz bandwidth, 7000 uV max input offset voltage, and 1.5 mA max supply current. Ideal for automotive applications due to its small outline, low bias current of 0.00001 uA, and wide operating temperature range from -40 to 125 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,368 parts In-Stock

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4,368

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Digiode

USA . 4,222 parts In-Stock

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4,222

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Distributors (Availability)

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One Stop Electronics

USA . 555 parts In-Stock

1+ parts

$0.410

100+ parts

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555

$0.410

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Parana Technologies

USA . 707 parts In-Stock

1+ parts

$1.850

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-

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$2.397

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707

$1.850

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$2.397

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DigiPath Technology Company

USA . 2,294 parts In-Stock

1+ parts

$2.037

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$1.874

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2,294

$2.037

$1.874

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ChromeModa Solutions

Germany . 6,266 parts In-Stock

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$2.079

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$1.705

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6,266

$2.079

$1.705

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IDEA Electronic Components Group

UK . 276 parts In-Stock

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$2.079

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$1.871

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276

$2.079

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$1.871

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AZTECH Wire

Italy . 539 parts In-Stock

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$10.537

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539

$10.537

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Kepictronics

USA . 9,133 parts In-Stock

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Glotronic Ltd.

UK . 3,900 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,769 parts In-Stock

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Corphita

USA . 2,705 parts In-Stock

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Alle Elektronik GmbH

Germany . 1,846 parts In-Stock

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Northwest PG Solutions

USA . 443 parts In-Stock

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Native Components

USA . 260 parts In-Stock

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Overview

Enhance your electronic designs with the BUF04701AIDGSRG4 by Texas Instruments, a high-quality Buffer Amplifier that offers unmatched performance and reliability. Manufactured by a trusted industry leader, this versatile component is ideal for a wide range of applications, providing precision and efficiency. With its innovative design and advanced technology, the BUF04701AIDGSRG4 delivers exceptional value and benefits to customers, making it a must-have for any project requiring superior signal buffering capabilities. Choose Texas Instruments for top-tier quality and seamless integration in your next electronic endeavor.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the internal components, ensuring durability and reliability.

Maximum Input Offset Voltage: 7000 uV

Low offset voltage helps in maintaining accuracy and precision in signal processing.

Surface Mount: YES

Allows for easy and convenient mounting on circuit boards, saving space and simplifying assembly.

Nominal Supply Voltage / Vsup (V): 5

Operates at a standard voltage level, making it compatible with a wide range of systems.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, making it suitable for industrial and automotive applications.

Nominal Bandwidth (3dB): 8 MHz

Provides a high bandwidth, allowing for fast signal processing and response.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, ideal for efficient operation.

Amplifier Type: BUFFER

As a buffer amplifier, it isolates the input from the output, preventing signal distortion and maintaining signal integrity.

Technical Specifications

Buffer Amplifiers BUF04701AIDGSRG4 attributes and parameters. Explore more Buffer Amplifiers devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Technology:

CMOS

Power Supply:

3.5/12 V

Total Functions:

4

Sub-Category:

Buffer Amplifiers

Performance Specifications

Nominal Bandwidth (3dB):

8 MHz

Nominal Slew Rate:

10 V/us

Input Offset Voltage Limit:

7 mV

Peak Bias Current:

10 pA

Maximum Bias Current (IIB) @25 °C:

10 pA

Operational Characteristics

Maximum Supply Current:

1.5 mA

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

6.6 V

Nominal Negative Supply Voltage (Vsup):

-5 V

Maximum Negative Supply Voltage:

-6.6 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Reflow Peak Time Limit:

30 s

Peak Reflow Temperature:

260 °C (500 °F)

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

10

Terminal Pitch:

0.02 in (0.5 mm)

Terminal Position:

Dual

Terminal Style:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

2

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

S-PDSO-G10

Packaging and Shipping

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP10,.19,20

Trade Compliance

BUF04701AIDGSRG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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