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5962-01-218-9268

Texas Instruments

5962-01-218-9268 by Texas Instruments

Texas Instruments' 5962-01-218-9268 is a MILITARY-grade OTP ROM with 1KX8 organization, 8192-bit memory density, and 175 ns access time. It operates b/w -55 to 125 °C and has a supply voltage of 5V. Ideal for applications requiring reliable non-volatile memory in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,902 parts In-Stock

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7,902

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Digiode

USA . 4,924 parts In-Stock

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4,924

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One Stop Electronics

USA . 807 parts In-Stock

1+ parts

$1.000

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807

$1.000

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Parana Technologies

USA . 604 parts In-Stock

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$2.291

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-

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$2.791

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604

$2.291

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$2.791

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DigiPath Technology Company

USA . 935 parts In-Stock

1+ parts

$2.523

100+ parts

$2.321

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935

$2.523

$2.321

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ChromeModa Solutions

Germany . 5,538 parts In-Stock

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$2.574

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$2.111

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5,538

$2.574

$2.111

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IDEA Electronic Components Group

UK . 747 parts In-Stock

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$2.574

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$2.317

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747

$2.574

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$2.317

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AZTECH Wire

Italy . 669 parts In-Stock

1+ parts

$12.782

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669

$12.782

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Corphita

USA . 632 parts In-Stock

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Native Components

USA . 515 parts In-Stock

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Northwest PG Solutions

USA . 308 parts In-Stock

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Overview

Enhance your electronic devices with the reliable and high-quality 5962-01-218-9268 OTP ROM by Texas Instruments. Known for their superior manufacturing standards, Texas Instruments delivers top-notch products that meet the needs of various applications. With its military-grade technology and wide temperature range, this OTP ROM ensures optimal performance in demanding environments. Upgrade your projects with ease and confidence, thanks to the value and benefits that this product brings to the table. Trust Texas Instruments to provide you with the cutting-edge solutions you need for success.

Feature Benefit Bullets

Package Body Material: CERAMIC

Provides excellent thermal conductivity and resistance to heat, making it suitable for applications in high temperature environments.

Nominal Supply Voltage / Vsup (V): 5

Standard 5V supply voltage ensures compatibility with most electronic systems.

Maximum Operating Temperature: 125 °C

Withstanding high temperatures allows for reliable operation in harsh conditions.

Organization: 1KX8

Organized as 1K words of 8 bits each, providing sufficient memory capacity for data storage.

Technology: TTL

Uses TTL (Transistor-Transistor Logic) technology for high-speed and reliable data transfer.

Memory IC Type: OTP ROM

OTP (One-Time Programmable) ROM offers secure data storage that cannot be altered, ensuring data integrity.

Maximum Access Time: 175 ns

Fast access time allows for quick retrieval of data, improving system performance.

Technical Specifications

OTP ROM 5962-01-218-9268 attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

175 ns

JESD-30 Code:

R-XDIP-T24

Memory Density:

8192 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

24

No. of Words:

1024 words

No. of Words Code:

1K

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

1KX8

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Sub-Category:

OTP ROMs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

5962-01-218-9268 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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