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ZPSD211RV-B-20J

STMicroelectronics

ZPSD211RV-B-20J by STMicroelectronics

ZPSD211RV-B-20J by STMicroelectronics is a versatile parallel I/O port with a max supply voltage of 5.5V and operates b/w 2.7V to 3V. It features 19 I/O lines, ideal for general-purpose applications in commercial environments. Its compact chip carrier design ensures efficient integration in electronic systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,190 parts In-Stock

1+ parts

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3,190

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Anansix

USA . 1,826 parts In-Stock

1+ parts

-

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1,826

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Vyrian

USA . 1,473 parts In-Stock

1+ parts

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1,473

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,363 parts In-Stock

1+ parts

$47.199

100+ parts

-

1k+ parts

$42.479

10k+ parts

-

2,363

$47.199

-

$42.479

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Corohmni

South Africa . 856 parts In-Stock

1+ parts

$55.803

100+ parts

-

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856

$55.803

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MKK Technologies

India . 858 parts In-Stock

1+ parts

$88.754

100+ parts

-

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858

$88.754

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DigiPath Technology Company

USA . 858 parts In-Stock

1+ parts

$88.754

100+ parts

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858

$88.754

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Corphita

USA . 2,393 parts In-Stock

1+ parts

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2,393

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Parana Technologies

USA . 144 parts In-Stock

1+ parts

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100+ parts

$56.433

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144

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$56.433

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Overview

Unlock unparalleled performance with the ZPSD211RV-B-20J from STMicroelectronics, a leader in innovative semiconductor solutions. This versatile parallel I/O port offers unmatched reliability for your applications, operating seamlessly within a wide voltage range and temperature spectrum. Benefit from its robust design, ensuring longevity and efficiency, while enhancing your projects with superior data handling capabilities. Trust STMicroelectronics to elevate your designs to new heights!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material suitable for various environmental conditions.

Surface Mount: YES

Allows for a compact design and enables efficient space utilization on PCBs.

Maximum Supply Voltage: 5.5 V

Offers flexibility in power supply choices, compatible with most electronic components.

Package Shape: SQUARE

The uniform shape is beneficial for consistent mounting and improved thermal management.

Power Supplies (V): 3

Standard voltage level enhances compatibility with other devices in the same system.

No. of Terminals: 44

Provides sufficient connections for complex circuits and multiple peripherals.

Package Style (Meter): CHIP CARRIER

Optimized for high-density applications, enhancing performance and reliability.

Minimum Supply Voltage: 2.7 V

Allows operation in low-voltage systems, extending battery life in portable applications.

Maximum Operating Temperature: 70 °C

Suitable for a wide range of operating conditions, enhancing reliability in diverse environments.

Minimum Operating Temperature: 0 °C

Can operate in cold environments, making it versatile for various applications.

Terminal Finish: TIN LEAD

Provides excellent solderability and corrosion resistance, ensuring long-term reliability.

Ultraviolet Erasable: N

Standard storage option, suitable for most applications that don't require UV erasure.

Terminal Position: QUAD

Facilitates easier routing of circuits on PCB, improving design efficiency.

No. of Ports: 3

Allows for multiple connections, enhancing the functionality of the device.

Maximum Seated Height: 4.57 mm

Compact height allows for low-profile designs, suitable for space-constrained applications.

Width: 16.5862 mm

Standardized width makes it compatible with a variety of mounting systems.

Length: 16.5862 mm

Uniform dimensions promote consistency in design and integration with other components.

Temperature Grade: COMMERCIAL

Offers a balance of performance and cost, suitable for a variety of commercial applications.

Peripheral IC Type: PARALLEL IO PORT, GENERAL PURPOSE

Versatile functionality allows it to be effectively used in a wide range of applications.

ROM Bits Size: 262144 Bits

Sufficient memory capacity for handling extensive data operations in parallel connections.

Technology: CMOS

Energy-efficient technology ensures low power consumption while maintaining performance.

Terminal Form: J BEND

Design promotes effective soldering and improves the stability of the component on the PCB.

Nominal Supply Voltage: 3 V

Ideal for modern digital circuits and helps in minimizing power consumption.

Terminal Pitch: 1.27 mm

Standard pitch facilitates compatibility with many existing PCBs and simplifies design.

Maximum Standby Current: 0.000005 Amp

Low standby current enhances energy efficiency, making it suitable for battery-powered applications.

Maximum Access Time: 0.0000002 ns

Fast access time ensures quick data transfer rates, improving overall system performance.

No. of I/O Lines: 19

Provides ample lines for interconnections, making it ideal for complex I/O operations.

Technical Specifications

Parallel I/O Ports ZPSD211RV-B-20J attributes and parameters. Explore more Parallel I/O Ports devices from STMicroelectronics

Specs

Maximum Access Time:

.0000002 ns

JESD-30 Code:

S-PQCC-J44

JESD-609 Code:

e0

Length:

16.5862 mm

No. of I/O Lines:

19

No. of Ports:

3

No. of Terminals:

44

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC44,.7SQ

Package Shape:

Package Style (Meter):

CHIP CARRIER

Power Supplies (V):

3

Qualification:

Not Qualified

ROM Bits Size:

262144 Bits

Maximum Seated Height:

4.57 mm

Maximum Standby Current:

.000005 Amp

Sub-Category:

Other Microprocessor ICs

Maximum Supply Voltage:

5.5 V

Minimum Supply Voltage:

2.7 V

Nominal Supply Voltage:

3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Ultraviolet Erasable:

N

Width:

16.5862 mm

Peripheral IC Type:

Trade Compliance

ZPSD211RV-B-20J Peripheral ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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