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Z0405DF

STMicroelectronics

Z0405DF by STMicroelectronics

STMicroelectronics Z0405DF is a TRIAC with 400V repetitive peak off-state voltage, 0.95A max RMS on-state current, and 5mA max DC gate trigger current. Ideal for applications requiring precise AC power control in various electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,062 parts In-Stock

1+ parts

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4,062

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Digiode

USA . 4,029 parts In-Stock

1+ parts

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4,029

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Anansix

USA . 430 parts In-Stock

1+ parts

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430

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,347 parts In-Stock

1+ parts

$4.226

100+ parts

-

1k+ parts

$3.803

10k+ parts

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2,347

$4.226

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$3.803

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MKK Technologies

India . 1,443 parts In-Stock

1+ parts

$7.946

100+ parts

-

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10k+ parts

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1,443

$7.946

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DigiPath Technology Company

USA . 1,443 parts In-Stock

1+ parts

$7.946

100+ parts

-

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10k+ parts

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1,443

$7.946

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Metaverse IC Inc.

Canada . 100,000 parts In-Stock

1+ parts

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100,000

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Kepictronics

USA . 61,000 parts In-Stock

1+ parts

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61,000

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A-Z Elektronik GmbH

Germany . 1,830 parts In-Stock

1+ parts

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1,830

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Corphita

USA . 1,116 parts In-Stock

1+ parts

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1,116

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Parana Technologies

USA . 467 parts In-Stock

1+ parts

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100+ parts

$5.052

1k+ parts

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467

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$5.052

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Assy Fe

Spain . 125 parts In-Stock

1+ parts

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125

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Overview

Experience unparalleled quality and reliability with the STMicroelectronics Z0405DF TRIAC. Manufactured by a trusted industry leader, this product offers exceptional performance in a variety of applications. From lighting controls to motor speed regulation, this TRIAC provides value and benefits that exceed expectations. With a maximum RMS on-state current of 0.95 A and a repetitive peak off-state voltage of 400 V, the Z0405DF delivers the power and efficiency you need. Trust in STMicroelectronics for innovative solutions that set the standard in the industry.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation properties and ensures durability and reliability of the product.

Maximum DC Gate Trigger Current: 5 mA

Allows for efficient and precise control over the switching of the device.

Configuration: SINGLE

Simplifies the design and installation process, making it user-friendly.

Package Shape: RECTANGULAR

Facilitates easy mounting and integration into various systems.

Terminal Form: THROUGH-HOLE

Enables secure and stable connections for improved performance.

Maximum Leakage Current: 0.2 mA

Ensures minimal power loss and enhances the overall efficiency of the device.

No. of Terminals: 3

Simplifies the connection process and reduces complexity in circuit design.

Package Style (Meter): IN-LINE

Facilitates easy installation and maintenance in various applications.

Maximum Operating Temperature: 125 °C

Allows for reliable operation in a wide range of environmental conditions.

Trigger Device Type: 4 QUADRANT LOGIC LEVEL TRIAC

Enables precise control and switching capabilities for optimal performance.

Minimum Operating Temperature: -45 °C

Ensures reliable operation even in extreme cold temperatures.

Terminal Position: SINGLE

Provides a simple and efficient layout for easy connections.

Maximum RMS On-state Current: 0.95 A

Supports high current handling capability for reliable performance.

Maximum DC Gate Trigger Voltage: 2 V

Ensures efficient triggering of the device for precise control.

Repetitive Peak Off-state Voltage: 400 V

Withstands high voltage levels for improved reliability and safety.

Minimum Critical Rate of Rise of Off-state Voltage: 30 V/us

Provides fast response times for effective switching operation.

Maximum Holding Current: 10 mA

Ensures stable operation and prevents unintentional triggering of the device.

Technical Specifications

Triode For Alternating Current (TRIAC) Z0405DF attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from STMicroelectronics

Specs

Additional Features:

SENSITIVE GATE

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

30 V/us

Maximum DC Gate Trigger Current:

5 mA

Maximum DC Gate Trigger Voltage:

2 V

Maximum Holding Current:

10 mA

JESD-30 Code:

R-PSIP-T3

Maximum Leakage Current:

.2 mA

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-45 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum RMS On-state Current:

.95 A

Repetitive Peak Off-state Voltage:

400 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

Trade Compliance

Z0405DF Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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