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TYN608G

STMicroelectronics

TYN608G by STMicroelectronics

TYN608G by STMicroelectronics is a single SCR in a rectangular plastic package, ideal for high-voltage applications. It supports up to 600 V reverse voltage and 84 A peak on-state current, making it suitable for power control circuits. With a max operating temp of 125 °C, it's reliable in demanding environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 2,892 parts In-Stock

1+ parts

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2,892

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Digiode

USA . 2,512 parts In-Stock

1+ parts

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1k+ parts

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2,512

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Vyrian

USA . 531 parts In-Stock

1+ parts

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531

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,397 parts In-Stock

1+ parts

$2.005

100+ parts

-

1k+ parts

$1.804

10k+ parts

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1,397

$2.005

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$1.804

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MKK Technologies

India . 1,720 parts In-Stock

1+ parts

$3.770

100+ parts

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1,720

$3.770

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DigiPath Technology Company

USA . 1,720 parts In-Stock

1+ parts

$3.770

100+ parts

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1,720

$3.770

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Parana Technologies

USA . 2,054 parts In-Stock

1+ parts

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100+ parts

$2.397

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2,054

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$2.397

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Corphita

USA . 1,161 parts In-Stock

1+ parts

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1,161

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Overview

Unlock powerful performance with the TYN608G from STMicroelectronics, a leader in innovative semiconductor solutions. Designed for superior reliability and efficiency, this Silicon Controlled Rectifier (SCR) excels in applications ranging from motor control to power management. Its robust construction ensures peak performance even in demanding environments, allowing you to enhance your designs with confidence. Choose TYN608G for unmatched quality and peace of mind in every project!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy enhances durability and insulation properties, making this SCR suitable for various applications.

Maximum DC Gate Trigger Current: 25 mA

A relatively low gate trigger current ensures efficient operation and reduces power consumption during activation.

Configuration: SINGLE

Single configuration simplifies circuit design and integration into existing systems.

Non Repetitive Peak On-state Current: 84 A

The high peak current capability allows this SCR to handle surge currents, making it ideal for demanding applications.

Package Shape: RECTANGULAR

Rectangular package shape optimizes space on PCB and supports efficient layout options.

Terminal Form: THROUGH-HOLE

Through-hole terminal design provides robust mechanical support and is ideal for high-power applications.

Maximum On-state Current: 5 A

This rating ensures reliable performance in standard operational conditions, suitable for various load applications.

Maximum Leakage Current: 2 mA

Low leakage current minimizes power loss and improves overall efficiency in the circuit.

Repetitive Peak Reverse Voltage: 600 V

High reverse voltage capability allows for operation in high voltage applications without breakdown.

Maximum Repetitive Peak Off-state Leakage Current: 10 uA

Very low leakage during off-state enhances energy efficiency and extends device lifespan.

No. of Terminals: 3

Three terminals provide essential connections for gate control and circuit integration, simplifying design.

Package Style (Meter): FLANGE MOUNT

Flange mount style offers easy installation and strong physical stability in various mounting environments.

Maximum Operating Temperature: 125 °C

High operating temperature limit allows for reliable performance in elevated thermal environments.

Trigger Device Type: SCR

SCR technology is well-suited for controlling high power applications, making it versatile for many uses.

Minimum Operating Temperature: -40 °C

Wide temperature range ensures operation in extreme conditions, enhancing reliability in diverse climates.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and corrosion resistance, ensuring long-term reliability.

Terminal Position: SINGLE

Single terminal position simplifies circuit layout and reduces potential for connection errors.

Maximum RMS On-state Current: 8 A

Max RMS current rating accommodates various load types, making it a flexible choice for many applications.

Maximum DC Gate Trigger Voltage: 1.5 V

Low gate trigger voltage promotes energy efficiency during activation and helps in reducing component costs.

Repetitive Peak Off-state Voltage: 600 V

Ability to withstand high off-state voltages enhances circuit protection and reliability for high voltage applications.

Minimum Critical Rate of Rise of Off-state Voltage: 500 V/us

High rate of voltage rise prevents unwanted turn-on and enhances stability in volatile environments.

Maximum Holding Current: 45 mA

This allows for easier turn-off in the circuit, contributing to dependable operational characteristics.

Nominal Circuit Commutated Turn-off Time: 70 µs

Quick turn-off time enhances efficiency and responsiveness in fast-switching applications.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TYN608G attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Nominal Circuit Commutated Turn-off Time:

70 us

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

500 V/us

Maximum DC Gate Trigger Current:

25 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

45 mA

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Leakage Current:

2 mA

Non Repetitive Peak On-state Current:

84 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

5 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

8 A

Maximum Repetitive Peak Off-state Leakage Current:

10 uA

Repetitive Peak Off-state Voltage:

600 V

Repetitive Peak Reverse Voltage:

600 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

TYN608G Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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