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TYN606

STMicroelectronics

TYN606 by STMicroelectronics

TYN606 by STMicroelectronics is a single SCR in a rectangular plastic package, ideal for high-voltage applications. It supports a max repetitive peak reverse voltage of 600 V and can handle up to 80 A non-repetitive peak on-state current. Operating b/w -40 °C to 125°C, it's perfect for robust power control solutions.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

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Digiode

USA . 3,945 parts In-Stock

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ECAB

Sweden . 2,849 parts In-Stock

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Vyrian

USA . 1,280 parts In-Stock

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Anansix

USA . 911 parts In-Stock

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J2 Sourcing AB

Sweden . 10 parts In-Stock

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LittleDiode

UK . 5 parts In-Stock

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IDEA Electronic Components Group

UK . 1,725 parts In-Stock

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$2.999

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$2.699

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MKK Technologies

India . 441 parts In-Stock

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$5.640

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DigiPath Technology Company

USA . 441 parts In-Stock

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$5.640

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Kepictronics

USA . 13,000 parts In-Stock

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Corphita

USA . 1,819 parts In-Stock

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Parana Technologies

USA . 741 parts In-Stock

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$3.586

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Overview

Elevate your power management solutions with the TYN606 from STMicroelectronics, where innovation meets reliability. Designed for optimal performance in demanding environments, this Silicon Controlled Rectifier (SCR) ensures exceptional quality and durability. With its impressive current handling capabilities and robust construction, the TYN606 is ideal for applications in industrial automation, motor control, and more. Trust STMicroelectronics to deliver unparalleled value and performance that empowers your projects to thrive.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy material ensures reliable performance and protection against environmental factors, making it suitable for various applications.

Maximum DC Gate Trigger Current: 15 mA

A maximum gate trigger current of 15 mA allows for efficient operation and flexibility in triggering circuits with lower energy consumption.

Configuration: SINGLE

The single configuration simplifies integration into circuits and reduces space requirements, ideal for compact designs.

Non Repetitive Peak On-state Current: 80 A

This high peak on-state current capability makes the product suitable for demanding applications, handling sudden load changes effectively.

Package Shape: RECTANGULAR

The rectangular package shape is optimized for space efficiency and ease of integration into circuit boards.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical connections and are ideal for high-power applications requiring reliable soldering.

Maximum On-state Current: 6 A

Supporting a maximum on-state current of 6 A, this SCR is capable of handling significant loads while maintaining stability.

Maximum Leakage Current: 2 mA

Low leakage current ensures minimal power loss and contributes to energy efficiency in electronic designs.

Repetitive Peak Reverse Voltage: 600 V

The high repetitive peak reverse voltage of 600 V provides robustness against voltage spikes, enhancing circuit reliability.

Maximum Repetitive Peak Off-state Leakage Current: 10 µA

With a maximum off-state leakage current of only 10 µA, this SCR minimizes energy waste when in the off state.

No. of Terminals: 3

Three terminals optimize connectivity for various circuit designs, simplifying application versatility.

Package Style (Meter): FLANGE MOUNT

The flange mount style offers ease of installation and secure mounting options in various configurations.

Maximum Operating Temperature: 125 °C

The ability to operate up to 125 °C ensures reliability in high-temperature environments, making it suitable for a wide range of industrial applications.

Trigger Device Type: SCR

As an SCR, this device is ideal for high-power and high-voltage applications, providing efficient switching capabilities.

Minimum Operating Temperature: -40 °C

With a wide operating temperature range starting at -40 °C, this SCR can perform reliably in harsh environmental conditions.

Terminal Finish: MATTE TIN

The matte tin terminal finish ensures good solderability and resistance to corrosion, enhancing long-term reliability.

Terminal Position: SINGLE

Single terminal position facilitates straightforward design and assembly processes in circuit layouts.

Maximum RMS On-state Current: 6 A

The maximum RMS on-state current of 6 A allows for efficient power handling in a variety of applications.

Maximum DC Gate Trigger Voltage: 1.5 V

A low gate trigger voltage of 1.5 V allows for efficient triggering in low-power circuits, reducing energy usage.

Repetitive Peak Off-state Voltage: 600 V

High off-state voltage supports reliability in high-voltage applications, preventing breakdown during operation.

Minimum Critical Rate of Rise of Off-state Voltage: 200 V/µs

This capability allows the SCR to manage rapid voltage transitions, improving circuit protection and performance.

Maximum Holding Current: 30 mA

A holding current of 30 mA ensures stable operation while minimizing power loss, suitable for low-current applications.

Nominal Circuit Commutated Turn-off Time: 70 µs

A fast turn-off time of 70 µs enhances the SCR's ability to handle high-speed switching applications efficiently.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TYN606 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Additional Features:

HIGH RELIABILITY

Nominal Circuit Commutated Turn-off Time:

70 us

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

200 V/us

Maximum DC Gate Trigger Current:

15 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

30 mA

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Leakage Current:

2 mA

Non Repetitive Peak On-state Current:

80 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

6 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

6 A

Maximum Repetitive Peak Off-state Leakage Current:

10 uA

Repetitive Peak Off-state Voltage:

600 V

Repetitive Peak Reverse Voltage:

600 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

TYN606 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

NSN

5961-14-482-4096, 5961144824096

NIIN

144824096

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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