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TYN604/F2

STMicroelectronics

TYN604/F2 by STMicroelectronics

STMicroelectronics TYN604/F2 is a SCR with 600V reverse voltage, 4A RMS current, and 15mA gate trigger current. It's used in applications requiring high power control like industrial automation and motor drives due to its fast turn-off time of 70us.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,185 parts In-Stock

1+ parts

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3,185

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Vyrian

USA . 1,760 parts In-Stock

1+ parts

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1,760

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Anansix

USA . 462 parts In-Stock

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462

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,197 parts In-Stock

1+ parts

$2.983

100+ parts

-

1k+ parts

$2.684

10k+ parts

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1,197

$2.983

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$2.684

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MKK Technologies

India . 1,521 parts In-Stock

1+ parts

$5.609

100+ parts

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1,521

$5.609

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DigiPath Technology Company

USA . 1,521 parts In-Stock

1+ parts

$5.609

100+ parts

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1,521

$5.609

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Corphita

USA . 4,229 parts In-Stock

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4,229

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Parana Technologies

USA . 2,260 parts In-Stock

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100+ parts

$3.566

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2,260

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$3.566

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Overview

Unlock the power of precise control with the TYN604/F2 by STMicroelectronics. As a leading manufacturer in the industry, STMicroelectronics delivers top-quality Silicon Controlled Rectifiers that are reliable and efficient. Perfect for a wide range of applications, this SCR offers customers unparalleled value and performance. Whether you need to regulate voltage in industrial machinery or control power in household appliances, the TYN604/F2 is the solution you've been looking for. Trust STMicroelectronics to provide you with the tools you need to succeed.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides good insulation and protection for the internal components of the SCR, ensuring reliability and durability.

Maximum DC Gate Trigger Current: 15 mA

The low gate trigger current allows for precise control and operation of the SCR, making it suitable for a variety of applications.

Configuration: SINGLE

The single configuration simplifies the setup and integration of the SCR into circuits, making it user-friendly and easy to work with.

Surface Mount: YES

The surface mount capability allows for easy and efficient PCB assembly, saving space and reducing manufacturing costs.

Repetitive Peak Reverse Voltage: 600 V

The high reverse voltage rating ensures reliable performance and protection against voltage spikes, making it suitable for high-power applications.

Maximum Repetitive Peak Off-state Leakage Current: 10 uA

The low off-state leakage current minimizes power loss and increases efficiency, making the SCR energy-efficient.

No. of Terminals: 3

The three terminal design provides easy connectivity and flexibility in circuit design, allowing for versatile application possibilities.

Maximum Operating Temperature: 125 °C

The high operating temperature range allows the SCR to perform reliably in harsh environments and under heavy loads.

Trigger Device Type: SCR

The SCR type trigger device provides fast switching capabilities and high reliability, making it suitable for demanding applications.

Minimum Operating Temperature: -40 °C

The low operating temperature ensures the SCR can function in a wide range of temperature conditions, making it versatile and dependable.

Maximum RMS On-state Current: 4 A

The high on-state current rating allows the SCR to handle heavy loads and high power applications without overheating or failing.

Maximum DC Gate Trigger Voltage: 1.5 V

The low gate trigger voltage ensures efficient and reliable activation of the SCR, improving overall performance and responsiveness.

Minimum Critical Rate of Rise of Off-state Voltage: 200 V/us

The high rate of rise of off-state voltage ensures quick and efficient switching of the SCR, reducing the risk of voltage spikes or transients.

Maximum Holding Current: 30 mA

The high holding current allows the SCR to maintain its on-state conduction even in the absence of a gate signal, ensuring stability and reliability in operation.

Nominal Circuit Commutated Turn-off Time: 70 us

The fast turn-off time of the SCR enables quick response and control in switching applications, improving overall performance and efficiency.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TYN604/F2 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Nominal Circuit Commutated Turn-off Time:

70 us

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

200 V/us

Maximum DC Gate Trigger Current:

15 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

30 mA

JESD-30 Code:

R-PSFM-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

4 A

Maximum Repetitive Peak Off-state Leakage Current:

10 uA

Repetitive Peak Off-state Voltage:

600 V

Repetitive Peak Reverse Voltage:

600 V

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

TYN604/F2 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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