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TYN604

STMicroelectronics

TYN604 by STMicroelectronics

TYN604 by STMicroelectronics is a single SCR in a rectangular plastic package, ideal for power control applications. It features a max DC gate trigger current of 15 mA, non-repetitive peak on-state current of 60 A, and operates b/w -40 °C to 125°C. This device is suitable for high-voltage switching with a repetitive peak reverse voltage of 600 V.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,134 parts In-Stock

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4,134

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Digiode

USA . 1,236 parts In-Stock

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1,236

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ECAB

Sweden . 539 parts In-Stock

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539

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Anansix

USA . 175 parts In-Stock

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175

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LittleDiode

UK . 11 parts In-Stock

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LWI Electronics Inc

India . 9 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,438 parts In-Stock

1+ parts

$3.572

100+ parts

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$3.215

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1,438

$3.572

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$3.215

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MKK Technologies

India . 1,925 parts In-Stock

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$6.718

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$6.718

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DigiPath Technology Company

USA . 1,925 parts In-Stock

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$6.718

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$6.718

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Parana Technologies

USA . 1,060 parts In-Stock

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$4.271

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1,060

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$4.271

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Corphita

USA . 740 parts In-Stock

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740

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Overview

Elevate your power management solutions with the TYN604 from STMicroelectronics, a leader in semiconductor innovation. This high-performance Silicon Controlled Rectifier (SCR) ensures remarkable reliability and efficiency across diverse applications, from industrial to consumer electronics. With its robust design and impressive specifications, the TYN604 delivers superior control and durability, empowering you to optimize system performance while reducing costs. Trust in STMicroelectronics for quality that drives success.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body ensures durability and protection against environmental factors, making the SCR reliable for long-term use.

Maximum DC Gate Trigger Current: 15 mA

A low gate trigger current requirement enhances energy efficiency during operation.

Configuration: SINGLE

The single configuration allows for simple integration into various electronic circuits.

Non Repetitive Peak On-state Current: 60 A

High peak current handling capability allows for robust performance in demanding applications.

Package Shape: RECTANGULAR

The rectangular shape provides a compact design, facilitating easy layout in PCB designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals offer strong mechanical support and reliable electrical connections in various applications.

Maximum On-state Current: 4 A

This capability is suitable for applications requiring moderate current control, ensuring versatility.

Maximum Leakage Current: 2 mA

Low leakage current reduces energy loss, enhancing the overall efficiency of the circuit.

Repetitive Peak Reverse Voltage: 600 V

High reverse voltage rating allows for use in high-voltage applications without risk of breakdown.

Maximum Repetitive Peak Off-state Leakage Current: 10 uA

Very low off-state leakage ensures minimal power loss in standby mode.

No. of Terminals: 3

Three terminals allow for versatile circuit configurations and easy connections.

Package Style (Meter): FLANGE MOUNT

Flange mount style facilitates easy installation and better thermal management in circuits.

Maximum Operating Temperature: 125 °C

The ability to operate at high temperatures increases reliability in harsh environments.

Trigger Device Type: SCR

Using SCR technology, this product is adept at managing high-current applications effectively.

Minimum Operating Temperature: -40 °C

Wide temperature range makes this SCR suitable for extreme conditions, ensuring reliability in diverse environments.

Terminal Finish: MATTE TIN

Matte tin finish provides excellent solderability and resistance to corrosion.

Terminal Position: SINGLE

Single terminal position simplifies circuit design and component layout.

Maximum RMS On-state Current: 4 A

This specification allows the SCR to handle continuous current effectively, ensuring stable operation.

Maximum DC Gate Trigger Voltage: 1.5 V

Low gate trigger voltage enhances safety and reduces power consumption during trigger operations.

Repetitive Peak Off-state Voltage: 600 V

This feature supports the device’s usage in high-voltage switching applications with minimal risk of failure.

Minimum Critical Rate of Rise of Off-state Voltage: 200 V/us

This high rate increases the device's capability of handling fast switching applications effectively.

Maximum Holding Current: 30 mA

Having a manageable holding current allows the SCR to effectively maintain conductivity while preventing accidental triggering.

Nominal Circuit Commutated Turn-off Time: 70 us

Fast turn-off time enables efficient switching, making it suitable for applications with rapid on/off requirements.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TYN604 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Nominal Circuit Commutated Turn-off Time:

70 us

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

200 V/us

Maximum DC Gate Trigger Current:

15 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

30 mA

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Leakage Current:

2 mA

Non Repetitive Peak On-state Current:

60 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

4 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

4 A

Maximum Repetitive Peak Off-state Leakage Current:

10 uA

Repetitive Peak Off-state Voltage:

600 V

Repetitive Peak Reverse Voltage:

600 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

TYN604 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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