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TYN608K

STMicroelectronics

TYN608K by STMicroelectronics

STMicroelectronics' TYN608K is a Silicon Controlled Rectifier with 40mA DC Gate Trigger Current, 84A Non Repetitive Peak On-state Current, and 8A Max On-state Current. It operates b/w -40 to 110 °C and has a Repetitive Peak Off-state Voltage of 600V. Ideal for applications requiring precise current control in industrial systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,774 parts In-Stock

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2,774

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Digiode

USA . 2,565 parts In-Stock

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Anansix

USA . 1,241 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,001 parts In-Stock

1+ parts

$3.642

100+ parts

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$3.278

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$3.642

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$3.278

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MKK Technologies

India . 632 parts In-Stock

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$6.849

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632

$6.849

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DigiPath Technology Company

USA . 632 parts In-Stock

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$6.849

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632

$6.849

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Parana Technologies

USA . 2,147 parts In-Stock

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$4.355

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2,147

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$4.355

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Corphita

USA . 2,043 parts In-Stock

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Overview

Unlock the power of reliable and efficient electrical control with the TYN608K by STMicroelectronics. As a leading manufacturer in the industry, STMicroelectronics ensures top-notch quality and performance in their Silicon Controlled Rectifiers (SCR). With a maximum DC Gate Trigger Current of 40 mA and Non Repetitive Peak On-state Current of 84 A, this SCR is perfect for a wide range of applications. From industrial automation to power supplies, the TYN608K offers unparalleled value, benefits, and advantages to customers seeking superior electrical solutions. Experience the difference with STMicroelectronics today.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 40 mA

Low gate trigger current allows for precise control over the SCR, making it ideal for applications requiring low power consumption.

Non Repetitive Peak On-state Current: 84 A

High non repetitive peak on-state current capability ensures the SCR can handle high transient currents without failure, making it suitable for demanding applications.

Maximum On-state Current: 8 A

With a maximum on-state current of 8 A, this SCR can effectively manage moderate to high power loads, making it versatile for various industrial applications.

Maximum Operating Temperature: 110 °C

The high maximum operating temperature of 110 °C ensures reliable performance even in harsh environmental conditions, making this product durable and long-lasting.

Trigger Device Type: SCR

Being a Silicon Controlled Rectifier (SCR), this device offers high reliability and robust performance in controlling electric power, making it a preferred choice in power electronics applications.

Repetitive Peak Off-state Voltage: 600 V

The high repetitive peak off-state voltage of 600 V allows the SCR to withstand high voltage spikes, ensuring stable operation in high voltage circuits.

Maximum Holding Current: 60 mA

The maximum holding current of 60 mA ensures the SCR remains in the on-state even after the gate current is removed, providing a stable and secure operation in critical applications.

Nominal Circuit Commutated Turn-off Time: 70 us

The nominal circuit commutated turn-off time of 70 µs ensures quick switching off of the SCR, enabling efficient control and regulation of power flow in dynamic systems.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TYN608K attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Nominal Circuit Commutated Turn-off Time:

70 us

Minimum Critical Rate of Rise of Off-state Voltage:

750 V/us

Maximum DC Gate Trigger Current:

40 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

60 mA

JESD-609 Code:

e0

Non Repetitive Peak On-state Current:

84 A

Maximum On-state Current:

8 A

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Repetitive Peak Off-state Voltage:

600 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Trigger Device Type:

SCR

Trade Compliance

TYN608K Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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