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TYN608/F3

STMicroelectronics

TYN608/F3 by STMicroelectronics

STMicroelectronics TYN608/F3 is a single SCR with 600V reverse voltage, 8A RMS current, and 15mA gate trigger current. Ideal for applications requiring high power control in industrial equipment, lighting systems, and motor drives.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,148 parts In-Stock

1+ parts

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4,148

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Anansix

USA . 2,160 parts In-Stock

1+ parts

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2,160

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Vyrian

USA . 1,698 parts In-Stock

1+ parts

-

100+ parts

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1,698

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 315 parts In-Stock

1+ parts

$3.187

100+ parts

-

1k+ parts

$2.868

10k+ parts

-

315

$3.187

-

$2.868

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MKK Technologies

India . 577 parts In-Stock

1+ parts

$5.993

100+ parts

-

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577

$5.993

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DigiPath Technology Company

USA . 577 parts In-Stock

1+ parts

$5.993

100+ parts

-

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10k+ parts

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577

$5.993

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Corphita

USA . 2,245 parts In-Stock

1+ parts

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2,245

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Parana Technologies

USA . 194 parts In-Stock

1+ parts

-

100+ parts

$3.810

1k+ parts

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194

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$3.810

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Overview

Unleash the power of your electronic devices with the TYN608/F3 by STMicroelectronics. Crafted with precision and quality, this Silicon Controlled Rectifier (SCR) offers unmatched performance and reliability. Whether it's for lighting control, motor speed regulation, or power supplies, this single configuration SCR delivers exceptional value and benefits to customers. With a maximum DC Gate Trigger Current of 15 mA and a Repetitive Peak Reverse Voltage of 600 V, this device ensures optimal functionality even in extreme conditions. Trust STMicroelectronics to provide you with cutting-edge solutions for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Maximum DC Gate Trigger Current: 15 mA

Allows for precise control over the triggering of the SCR, enhancing the efficiency of the device.

Configuration: SINGLE

Simplified design with a single configuration, making it easy to integrate into various electronic systems.

Repetitive Peak Reverse Voltage: 600 V

High reverse voltage rating for added safety and reliability in high voltage applications.

Maximum Repetitive Peak Off-state Leakage Current: 10 uA

Low leakage current ensures minimal power loss when the SCR is in the off state, improving overall energy efficiency.

Maximum RMS On-state Current: 8 A

High current handling capability, suitable for applications that require a significant amount of power.

Maximum Operating Temperature: 125 °C

Wide operating temperature range allows the SCR to function reliably in various environmental conditions.

Minimum Operating Temperature: -40 °C

Can operate efficiently in low-temperature environments, expanding the range of applications for the product.

Repetitive Peak Off-state Voltage: 600 V

High off-state voltage rating ensures protection against voltage spikes and surges.

Maximum Holding Current: 30 mA

The ability to hold a certain level of current without turning on allows for stable operation in specific applications.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TYN608/F3 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Case Connection:

Nominal Circuit Commutated Turn-off Time:

70 us

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

200 V/us

Maximum DC Gate Trigger Current:

15 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

30 mA

JESD-30 Code:

R-PSFM-G2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

8 A

Maximum Repetitive Peak Off-state Leakage Current:

10 uA

Repetitive Peak Off-state Voltage:

600 V

Repetitive Peak Reverse Voltage:

600 V

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

TYN608/F3 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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