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TYN608

STMicroelectronics

TYN608 by STMicroelectronics

TYN608 by STMicroelectronics is a single SCR in a rectangular plastic package, ideal for power control applications. It features a max DC gate trigger current of 15 mA, non-repetitive peak on-state current of 80 A, and operates up to 125 °C. This device is suitable for high-voltage switching with a repetitive peak reverse voltage of 600 V.

Median Price

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Lifecycle Status

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9

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1k+

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Vyrian

USA . 2,879 parts In-Stock

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Digiode

USA . 1,743 parts In-Stock

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ComSIT Distribution GmbH

Germany . 726 parts In-Stock

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Anansix

USA . 571 parts In-Stock

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Huijzer Components

Netherlands . 556 parts In-Stock

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R&J Components

USA . 300 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 213 parts In-Stock

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ECAB

Sweden . 186 parts In-Stock

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LittleDiode

UK . 14 parts In-Stock

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IDEA Electronic Components Group

UK . 308 parts In-Stock

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$3.118

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$2.806

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MKK Technologies

India . 308 parts In-Stock

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$5.863

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DigiPath Technology Company

USA . 308 parts In-Stock

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Kepictronics

USA . 13,000 parts In-Stock

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Corphita

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Authorized Procurement Solutions

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Parana Technologies

USA . 1,706 parts In-Stock

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Speed Components Ltd (Excess)

Israel . 40 parts In-Stock

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Overview

Elevate your projects with the TYN608 from STMicroelectronics—where reliability meets innovation. This single Silicon Controlled Rectifier (SCR) is designed for robust performance in demanding applications, offering exceptional durability and efficiency. With a remarkable peak on-state current of 80 A and a wide operating temperature range, the TYN608 ensures stability in power management solutions. Trust STMicroelectronics' legacy of quality to empower your designs with superior functionality and peace of mind.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and resistance to environmental factors, making it suitable for a wide range of applications.

Maximum DC Gate Trigger Current: 15 mA

With a maximum gate trigger current of only 15 mA, this SCR allows for efficient control while minimizing power consumption.

Configuration: SINGLE

The single configuration simplifies circuit design and integration, making it ideal for compact systems.

Non Repetitive Peak On-state Current: 80 A

The high non-repetitive peak on-state current capability of 80 A enables the SCR to handle sudden surges, providing reliability in high-load conditions.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient space utilization and easy PCB integration.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust mechanical support and stable electrical connections, enhancing reliability in various environments.

Maximum On-state Current: 8 A

With a maximum on-state current of 8 A, this SCR can efficiently control power within its rated specifications.

Maximum Leakage Current: 2 mA

The low maximum leakage current of 2 mA ensures minimal energy waste and improved efficiency in application.

Repetitive Peak Reverse Voltage: 600 V

The ability to withstand up to 600 V of repetitive peak reverse voltage makes this SCR suitable for high voltage applications.

Maximum Repetitive Peak Off-state Leakage Current: 10 uA

A maximum leakage current of just 10 µA during off-state ensures low power losses and better performance in standby applications.

No. of Terminals: 3

The three-terminal design simplifies connections and enhances circuit flexibility.

Package Style (Meter): FLANGE MOUNT

The flange mount style allows for secure installation in various configurations, facilitating better mechanical stability.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125 °C, this SCR is capable of functioning efficiently in high-temperature environments.

Trigger Device Type: SCR

As a silicon-controlled rectifier, this product provides reliable and efficient control of electrical power in various applications.

Minimum Operating Temperature: -40 °C

The capability to operate down to -40 °C ensures functionality in extreme cold conditions, making it versatile for diverse applications.

Terminal Finish: MATTE TIN

The matte tin finish provides excellent solderability and corrosion resistance, enhancing the longevity of the connections.

Terminal Position: SINGLE

A single terminal position streamlines layout design, making it ideal for compact and straightforward circuit designs.

Maximum RMS On-state Current: 8 A

The maximum RMS on-state current of 8 A indicates strong performance in continuous operation without thermal overload.

Maximum DC Gate Trigger Voltage: 1.5 V

A low gate trigger voltage of 1.5 V helps minimize energy consumption and simplifies circuit design.

Case Connection: ANODE

The anode case connection is compatible with various power circuit configurations, enhancing its adaptability.

Repetitive Peak Off-state Voltage: 600 V

Its durable off-state voltage capability of 600 V allows the SCR to endure high voltage transience without failure.

Minimum Critical Rate of Rise of Off-state Voltage: 200 V/µs

A high critical rate of rise of off-state voltage ensures fast turn-off capability, essential for reliable circuit operation.

Maximum Holding Current: 30 mA

With a maximum holding current of 30 mA, this SCR can sustain its state effectively with low triggering currents.

Nominal Circuit Commutated Turn-off Time: 70 µs

The nominal turn-off time of 70 µs enables rapid switching, which is critical for efficient power management in various applications.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TYN608 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Case Connection:

Nominal Circuit Commutated Turn-off Time:

70 us

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

200 V/us

Maximum DC Gate Trigger Current:

15 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

30 mA

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Leakage Current:

2 mA

Non Repetitive Peak On-state Current:

80 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

8 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

8 A

Maximum Repetitive Peak Off-state Leakage Current:

10 uA

Repetitive Peak Off-state Voltage:

600 V

Repetitive Peak Reverse Voltage:

600 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

TYN608 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

NSN

5961-01-591-5023, 5961015915023

NIIN

015915023

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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