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TYN404/F2

STMicroelectronics

TYN404/F2 by STMicroelectronics

STMicroelectronics TYN404/F2 is a single SCR with 400V reverse voltage, 4A RMS current, and 15mA gate trigger current. Ideal for applications requiring reliable switching in temperatures ranging from -40 °C to 125°C. Suitable for surface mount designs due to its gull wing terminals and flange mount package style.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,256 parts In-Stock

1+ parts

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4,256

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Vyrian

USA . 413 parts In-Stock

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413

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Anansix

USA . 259 parts In-Stock

1+ parts

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259

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 636 parts In-Stock

1+ parts

$3.573

100+ parts

-

1k+ parts

$3.216

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636

$3.573

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$3.216

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MKK Technologies

India . 2,018 parts In-Stock

1+ parts

$6.719

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2,018

$6.719

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DigiPath Technology Company

USA . 2,018 parts In-Stock

1+ parts

$6.719

100+ parts

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2,018

$6.719

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Corphita

USA . 960 parts In-Stock

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960

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Parana Technologies

USA . 849 parts In-Stock

1+ parts

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$4.272

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849

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$4.272

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Overview

Unlock the power of innovation with the TYN404/F2 by STMicroelectronics. As a leading manufacturer in the industry, STMicroelectronics guarantees unrivaled quality and reliability. This Silicon Controlled Rectifier (SCR) offers countless applications, providing seamless performance in a variety of electronic devices. With its efficient design and advanced features, customers can expect optimal functionality and long-lasting durability. Experience the value and advantages that the TYN404/F2 brings to your projects, delivering exceptional results every time. Trust STMicroelectronics to elevate your electronics to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy materials provide good electrical insulation and protection, making the SCR durable and reliable.

Maximum DC Gate Trigger Current: 15 mA

The low gate trigger current allows for efficient control of the SCR, making it suitable for various applications.

Configuration: SINGLE

Single configuration simplifies the circuit design and makes the SCR easy to integrate into different systems.

Surface Mount: YES

Surface mount capability makes installation and replacement of the SCR convenient and space-saving.

Repetitive Peak Reverse Voltage: 400 V

The high reverse voltage rating ensures reliable operation and protection against voltage spikes.

Maximum Repetitive Peak Off-state Leakage Current: 10 uA

Low leakage current improves the efficiency of the SCR and reduces power losses in the off-state.

No. of Terminals: 3

Three terminals offer flexibility in the connection of control and power components, making it versatile for different systems.

Maximum Operating Temperature: 125 °C

With a high operating temperature range, the SCR can withstand harsh environmental conditions and high heat without performance degradation.

Trigger Device Type: SCR

Being a Silicon Controlled Rectifier, this device provides precise and reliable switching control for various applications.

Maximum RMS On-state Current: 4 A

The high current rating allows the SCR to handle heavy loads with efficiency and reliability.

Maximum Holding Current: 30 mA

The holding current level ensures that the SCR remains in the ON state under specific conditions, enhancing stability in the circuit.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TYN404/F2 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Nominal Circuit Commutated Turn-off Time:

70 us

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

200 V/us

Maximum DC Gate Trigger Current:

15 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

30 mA

JESD-30 Code:

R-PSFM-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

4 A

Maximum Repetitive Peak Off-state Leakage Current:

10 uA

Repetitive Peak Off-state Voltage:

400 V

Repetitive Peak Reverse Voltage:

400 V

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

TYN404/F2 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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