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TYN408G

STMicroelectronics

TYN408G by STMicroelectronics

TYN408G by STMicroelectronics is a single SCR in a rectangular plastic package, ideal for power control applications. It features a max DC gate trigger current of 25 mA, non-repetitive peak on-state current of 84 A, and operates b/w -40 °C to 125°C. This device efficiently manages high voltages with a repetitive peak reverse voltage of 400 V.

Median Price

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Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,615 parts In-Stock

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Digiode

USA . 2,078 parts In-Stock

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Anansix

USA . 2,063 parts In-Stock

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ECAB

Sweden . 754 parts In-Stock

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ComSIT Distribution GmbH

Germany . 500 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 458 parts In-Stock

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LittleDiode

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IDEA Electronic Components Group

UK . 1,131 parts In-Stock

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$2.961

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$2.665

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MKK Technologies

India . 2,368 parts In-Stock

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$5.569

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DigiPath Technology Company

USA . 2,368 parts In-Stock

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Kepictronics

USA . 10,500 parts In-Stock

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A-Z Elektronik GmbH

Germany . 4,566 parts In-Stock

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Corphita

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Parana Technologies

USA . 1,435 parts In-Stock

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Perfect Parts

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Authorized Procurement Solutions

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Cyclops Electronics Ltd (Excess)

UK . 458 parts In-Stock

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GreenTree Electronics

Israel . 369 parts In-Stock

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Glotronic Ltd.

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Overview

Elevate your power control solutions with the TYN408G from STMicroelectronics, a trusted leader in semiconductor innovation. This reliable Silicon Controlled Rectifier (SCR) excels in applications demanding robust performance and exceptional efficiency. With its impressive peak current handling and low leakage rates, the TYN408G ensures longevity and reliability in various electronic systems, providing unmatched value for engineers and designers seeking quality and durability. Experience the advantage of STMicroelectronics’ expertise—where cutting-edge technology meets unparalleled customer support.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body ensures durability and insulation, making it suitable for a wide range of applications.

Maximum DC Gate Trigger Current: 25 mA

A relatively low gate trigger current of 25 mA enhances efficiency and reduces power consumption during operation.

Configuration: SINGLE

The single configuration simplifies the circuit design, making it easier to implement in various applications.

Non Repetitive Peak On-state Current: 84 A

With a high non-repetitive peak on-state current rating of 84 A, this SCR can handle significant current surges, providing reliability in demanding conditions.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient space utilization on PCBs and facilitates easy mounting.

Terminal Form: THROUGH-HOLE

The through-hole terminal form provides strong mechanical support and a robust electrical connection, ideal for high-power applications.

Maximum On-state Current: 5 A

This SCR's maximum on-state current of 5 A is suitable for controlling medium-power devices effectively.

Maximum Leakage Current: 2 mA

A low maximum leakage current of 2 mA minimizes energy loss during operation, improving overall efficiency.

Repetitive Peak Reverse Voltage: 400 V

Ability to withstand a repetitive peak reverse voltage of 400 V makes this SCR suitable for high-voltage applications.

Maximum Repetitive Peak Off-state Leakage Current: 10 uA

Extremely low off-state leakage current of 10 uA ensures minimal power wastage while the device is off.

No. of Terminals: 3

The three-terminal design provides flexibility in circuit design, allowing for more versatile applications.

Package Style (Meter): FLANGE MOUNT

The flange mount style enhances the thermal characteristics and allows for secure and stable mounting in various installations.

Maximum Operating Temperature: 125 °C

A high maximum operating temperature of 125 °C ensures reliability and performance in demanding environments.

Trigger Device Type: SCR

As an SCR, this device is capable of handling high power and controlling large currents efficiently in various applications.

Minimum Operating Temperature: -40 °C

The capability to operate at such low temperatures makes this SCR suitable for harsh environmental conditions.

Terminal Finish: MATTE TIN

The matte tin terminal finish enhances solderability and prevents corrosion, ensuring reliable long-term performance.

Terminal Position: SINGLE

Single terminal position simplifies installation and minimizes potential errors during circuit assembly.

Maximum RMS On-state Current: 8 A

The 8 A maximum RMS on-state current rating allows for effective control of load currents in various applications.

Maximum DC Gate Trigger Voltage: 1.5 V

A low gate trigger voltage of 1.5 V reduces the need for additional gate voltage regulation, simplifying circuit design.

Repetitive Peak Off-state Voltage: 400 V

This SCR is capable of withstanding repetitive peak off-state voltages of 400 V, ensuring reliability in high voltage scenarios.

Minimum Critical Rate of Rise of Off-state Voltage: 500 V/us

High critical rate rise capability enhances performance in applications requiring rapid voltage turn-off.

Maximum Holding Current: 45 mA

A low maximum holding current of 45 mA allows for better control of the SCR, improving application versatility.

Nominal Circuit Commutated Turn-off Time: 70 μs

A quick turn-off time of 70 μs ensures fast response in switching applications, improving overall system performance.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TYN408G attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Nominal Circuit Commutated Turn-off Time:

70 us

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

500 V/us

Maximum DC Gate Trigger Current:

25 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

45 mA

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Leakage Current:

2 mA

Non Repetitive Peak On-state Current:

84 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

5 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

8 A

Maximum Repetitive Peak Off-state Leakage Current:

10 uA

Repetitive Peak Off-state Voltage:

400 V

Repetitive Peak Reverse Voltage:

400 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

TYN408G Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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