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TYN408K

STMicroelectronics

TYN408K by STMicroelectronics

STMicroelectronics' TYN408K is a Silicon Controlled Rectifier with 40mA DC Gate Trigger Current, 84A Non Repetitive Peak On-state Current, and 8A Max On-state Current. It operates b/w -40 to 110 °C and is commonly used in power control applications due to its high current handling capabilities.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,637 parts In-Stock

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1,637

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Vyrian

USA . 249 parts In-Stock

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249

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Anansix

USA . 223 parts In-Stock

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223

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,453 parts In-Stock

1+ parts

$2.817

100+ parts

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$2.535

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1,453

$2.817

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$2.535

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MKK Technologies

India . 1,478 parts In-Stock

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$5.297

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$5.297

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DigiPath Technology Company

USA . 1,478 parts In-Stock

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$5.297

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1,478

$5.297

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Corphita

USA . 4,574 parts In-Stock

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4,574

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Parana Technologies

USA . 1,898 parts In-Stock

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$3.368

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1,898

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$3.368

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Overview

Experience the power of reliable performance with the TYN408K from STMicroelectronics. As a leading manufacturer in the industry, STMicroelectronics delivers top-quality Silicon Controlled Rectifiers (SCR) designed for a range of applications. With a maximum DC Gate Trigger Current of 40 mA and a Non Repetitive Peak On-state Current of 84 A, this SCR offers unmatched durability and efficiency. Whether you're looking to control power in industrial machinery or regulate voltage in consumer electronics, the TYN408K provides the value, benefits, and advantages that customers need to succeed. Trust STMicroelectronics for all your semiconductor needs.

Feature Benefit Bullets

Maximum DC Gate Trigger Current 40 mA

Allows for precise control of the gate trigger, ensuring reliable and accurate switching of the SCR.

Non Repetitive Peak On-state Current 84 A

Capable of handling high peak currents temporarily, making it suitable for applications with sudden surges in current.

Maximum On-state Current 8 A

Suitable for applications requiring continuous current flow within this range without causing damage to the SCR.

Maximum Operating Temperature 110 °C

Can operate at high temperatures without performance degradation, making it reliable in harsh environments.

Trigger Device Type SCR

The Silicon Controlled Rectifier design provides high reliability and efficiency in controlling current flow.

Minimum Operating Temperature -40 °C

Capable of functioning in extremely cold conditions, making it versatile for a wide range of operating environments.

Terminal Finish TIN LEAD

Provides excellent connectivity and ensures durability of the terminals, enhancing the overall lifespan of the SCR.

Maximum DC Gate Trigger Voltage 1.5 V

Low gate trigger voltage requirement allows for energy-efficient operation and precise control of the SCR.

Repetitive Peak Off-state Voltage 400 V

Withstands high off-state voltages repeatedly, making it suitable for applications with fluctuating voltage levels.

Minimum Critical Rate of Rise of Off-state Voltage 750 V/us

Can handle rapid changes in off-state voltage, ensuring stability and reliability in high-voltage applications.

Maximum Holding Current 60 mA

Maintains current flow at a specified level even after the gate trigger is removed, ensuring stability in the circuit.

Nominal Circuit Commutated Turn-off Time 70 us

Fast turn-off time allows for quick response in switching off the SCR, reducing the risk of overheating and damage.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TYN408K attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Nominal Circuit Commutated Turn-off Time:

70 us

Minimum Critical Rate of Rise of Off-state Voltage:

750 V/us

Maximum DC Gate Trigger Current:

40 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

60 mA

JESD-609 Code:

e0

Non Repetitive Peak On-state Current:

84 A

Maximum On-state Current:

8 A

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Repetitive Peak Off-state Voltage:

400 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Trigger Device Type:

SCR

Trade Compliance

TYN408K Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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