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TYN406

STMicroelectronics

TYN406 by STMicroelectronics

TYN406 by STMicroelectronics is a single SCR in a rectangular plastic/epoxy package, ideal for power control applications. It features a max DC gate trigger current of 15 mA, non-repetitive peak on-state current of 80 A, and operates b/w -40 °C to 125°C. This device excels in managing high voltages with a repetitive peak reverse voltage of 400 V.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Vyrian

USA . 2,601 parts In-Stock

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Digiode

USA . 658 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 268 parts In-Stock

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Anansix

USA . 198 parts In-Stock

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ECAB

Sweden . 16 parts In-Stock

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LittleDiode

UK . 8 parts In-Stock

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 388 parts In-Stock

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$3.681

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$3.313

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MKK Technologies

India . 1,597 parts In-Stock

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$6.922

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DigiPath Technology Company

USA . 1,597 parts In-Stock

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$6.922

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$6.922

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Kepictronics

USA . 13,000 parts In-Stock

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Corphita

USA . 4,203 parts In-Stock

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Parana Technologies

USA . 471 parts In-Stock

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$4.401

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Assy Fe

Spain . 25 parts In-Stock

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Overview

Unlock powerful performance with the TYN406 from STMicroelectronics, a leader in high-quality semiconductor solutions. This Silicon Controlled Rectifier (SCR) excels in energy efficiency and reliability, making it perfect for applications in motor control, heating, and power supply systems. With robust design and exceptional thermal stability, the TYN406 ensures seamless operation even in demanding environments, delivering unparalleled value and peace of mind for your projects. Choose TYN406 for unmatched quality and industry-leading support!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of durable plastic/epoxy material ensures reliable performance in environmental conditions, contributing to the longevity of the product.

Maximum DC Gate Trigger Current: 15 mA

This low gate trigger current allows for efficient and straightforward triggering of the SCR, optimizing power consumption in control circuits.

Configuration: SINGLE

With a single configuration, this SCR simplifies circuit design and integration, making it ideal for a variety of applications.

Non Repetitive Peak On-state Current: 80 A

The high non-repetitive peak on-state current rating allows for robust performance under transient conditions, making it suitable for high-power applications.

Package Shape: RECTANGULAR

The rectangular package shape facilitates easy mounting and integration in various assembly environments, enhancing usability.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical support and stable electrical connections, ensuring reliability in demanding applications.

Maximum On-state Current: 6 A

Supporting a maximum on-state current of 6 A makes this SCR suitable for a range of applications while maintaining efficiency.

Maximum Leakage Current: 2 mA

Low leakage current improves energy efficiency and reduces heat generation, which can enhance overall system reliability.

Repetitive Peak Reverse Voltage: 400 V

The high repetitive peak reverse voltage rating enables this SCR to be used in high-voltage applications without risk of breakdown.

Maximum Repetitive Peak Off-state Leakage Current: 10 uA

Ultra-low off-state leakage current ensures minimal power loss and enhances the efficiency of the circuit when the SCR is in the off state.

No. of Terminals: 3

A three-terminal design optimizes connectivity options and supports various configurations, making it versatile for different circuits.

Package Style (Meter): FLANGE MOUNT

Flange mount packaging enhances the thermal management capabilities of the SCR, allowing for better heat dissipation in compact spaces.

Maximum Operating Temperature: 125 °C

A high maximum operating temperature allows for reliable performance in demanding thermal conditions, suitable for industrial applications.

Trigger Device Type: SCR

SCR trigger device type enables efficient control over power in AC and DC applications, proving its utility in power electronics.

Minimum Operating Temperature: -40 °C

Wide operating temperature range from -40 °C ensures reliable functionality in extreme conditions, enhancing application versatility.

Terminal Finish: MATTE TIN

Matte tin terminal finish improves solderability and helps maintain good electrical conductivity, crucial for reliable connections.

Terminal Position: SINGLE

Single terminal positioning simplifies the design of the PCB layout, allowing for efficient space usage in compact designs.

Maximum RMS On-state Current: 6 A

This rating supports the SCR's performance in continuous operation scenarios while ensuring stability in varying load conditions.

Maximum DC Gate Trigger Voltage: 1.5 V

Low gate trigger voltage enhances safety and efficiency, allowing for easier integration with low-voltage control components.

Repetitive Peak Off-state Voltage: 400 V

A high off-state voltage rating provides safety margins during operation, ensuring reliability in electrical isolation applications.

Minimum Critical Rate of Rise of Off-state Voltage: 200 V/us

A high rise rate provides additional protection against voltage spikes, which can extend the device's operational lifespan.

Maximum Holding Current: 30 mA

This relatively low holding current allows for quick turn-off and efficient power control, essential for high-speed applications.

Nominal Circuit Commutated Turn-off Time: 70 us

A short commutation turn-off time enables high-frequency switching applications, making it suitable for advanced electronic circuits.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TYN406 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Nominal Circuit Commutated Turn-off Time:

70 us

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

200 V/us

Maximum DC Gate Trigger Current:

15 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

30 mA

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Leakage Current:

2 mA

Non Repetitive Peak On-state Current:

80 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

6 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

6 A

Maximum Repetitive Peak Off-state Leakage Current:

10 uA

Repetitive Peak Off-state Voltage:

400 V

Repetitive Peak Reverse Voltage:

400 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

TYN406 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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