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TS420-400

STMicroelectronics

TS420-400 by STMicroelectronics

TS420-400 by STMicroelectronics is a single SCR in a flange mount package, ideal for controlling high voltage applications. It features a max DC gate trigger current of 0.2 mA and can handle repetitive peak reverse voltages up to 400 V. With an on-state current of 4 A, it's perfect for power management tasks.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,680 parts In-Stock

1+ parts

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3,680

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Vyrian

USA . 1,452 parts In-Stock

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1,452

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Anansix

USA . 1,205 parts In-Stock

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1,205

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 19 parts In-Stock

1+ parts

$4.259

100+ parts

-

1k+ parts

$3.833

10k+ parts

-

19

$4.259

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$3.833

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MKK Technologies

India . 1,598 parts In-Stock

1+ parts

$8.008

100+ parts

-

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1,598

$8.008

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DigiPath Technology Company

USA . 1,598 parts In-Stock

1+ parts

$8.008

100+ parts

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1,598

$8.008

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Parana Technologies

USA . 1,887 parts In-Stock

1+ parts

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100+ parts

$5.092

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1,887

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$5.092

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Corphita

USA . 1,576 parts In-Stock

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1,576

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Overview

Unlock superior performance with the TS420-400 from STMicroelectronics, a trusted leader in semiconductor innovation. This premium Silicon Controlled Rectifier (SCR) is designed for reliability and efficiency across diverse applications, from power control to lighting systems. With its robust construction and exceptional voltage handling, the TS420-400 delivers outstanding value, ensuring long-lasting performance that empowers your projects. Experience the quality advantage of STMicroelectronics today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy in the body material provides good insulation properties and durability, making it suitable for various environmental conditions.

Maximum DC Gate Trigger Current: 0.2 mA

A low gate trigger current allows for easier control with minimal power loss, enhancing energy efficiency in circuit designs.

Configuration: SINGLE

The single configuration simplifies circuit designs and is ideal for applications where discrete control is needed.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient PCB layout and better integration into various designs.

Terminal Form: THROUGH-HOLE

Through-hole terminal form ensures strong mechanical connections and stable soldering, which is beneficial for high-reliability applications.

Repetitive Peak Reverse Voltage: 400 V

A high repetitive peak reverse voltage rating enables this SCR to be used in high-voltage applications, increasing its versatility.

No. of Terminals: 3

Three terminals provide adequate connection options for anode, gate, and cathode, facilitating easy integration and circuit configuration.

Package Style (Meter): FLANGE MOUNT

Flange mount style allows for secure installation, making it suitable for various industrial and commercial applications.

Trigger Device Type: SCR

As an SCR, this component is efficient for controlling high power loads, suitable for use in AC and DC applications.

Terminal Position: SINGLE

Single terminal position enhances its usability in compact designs without sacrificing performance.

Maximum RMS On-state Current: 4 A

A maximum RMS on-state current of 4 A makes this SCR capable of handling moderate loads efficiently, providing reliability in operation.

Case Connection: ANODE

Direct anode connection allows for straightforward circuit design, supporting better performance in various applications.

Repetitive Peak Off-state Voltage: 400 V

Matching the repetitive peak reverse voltage, this rating reinforces the SCR's suitability for high-voltage applications, ensuring durability in operation.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TS420-400 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Additional Features:

SENSITIVE GATE

Case Connection:

Configuration:

Maximum DC Gate Trigger Current:

.2 mA

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

4 A

Repetitive Peak Off-state Voltage:

400 V

Repetitive Peak Reverse Voltage:

400 V

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

TS420-400 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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