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TS420-700B

STMicroelectronics

TS420-700B by STMicroelectronics

The STMicroelectronics TS420-700B is a Silicon Controlled Rectifier with a max DC Gate Trigger Current of 0.2 mA and Non Repetitive Peak On-state Current of 30 A. It is designed for applications requiring a Max RMS On-state Current of 4 A, such as power control circuits in industrial electronics.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 1,653 parts In-Stock

1+ parts

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1,653

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Digiode

USA . 814 parts In-Stock

1+ parts

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814

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Vyrian

USA . 773 parts In-Stock

1+ parts

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773

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,802 parts In-Stock

1+ parts

$3.193

100+ parts

-

1k+ parts

$2.874

10k+ parts

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1,802

$3.193

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$2.874

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MKK Technologies

India . 613 parts In-Stock

1+ parts

$6.005

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613

$6.005

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DigiPath Technology Company

USA . 613 parts In-Stock

1+ parts

$6.005

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613

$6.005

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Kepictronics

USA . 15,000 parts In-Stock

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15,000

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Corphita

USA . 2,043 parts In-Stock

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2,043

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Parana Technologies

USA . 1,212 parts In-Stock

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$3.818

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1,212

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$3.818

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Overview

Unlock the power of advanced technology with the TS420-700B by STMicroelectronics. As a leading manufacturer in the industry, STMicroelectronics delivers top-of-the-line Silicon Controlled Rectifiers (SCR) that are versatile and reliable. Whether you're looking to optimize power management systems or enhance motor control applications, this SCR offers exceptional performance and durability. With a focus on quality and innovation, STMicroelectronics ensures that customers receive the best value and benefits from their products. Experience the advantages of the TS420-700B and take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Maximum DC Gate Trigger Current: 0.2 mA

Allows for precise control and reliable triggering of the SCR.

Configuration: SINGLE

Simplifies installation and operation, making it easy to integrate into existing systems.

Non Repetitive Peak On-state Current: 30 A

Can handle high currents without damage, suitable for demanding applications.

Surface Mount: YES

Facilitates easy and space-saving mounting on circuit boards.

Package Shape: RECTANGULAR

Fits well with standard PCB layouts, making it compatible with various designs.

Terminal Form: GULL WING

Allows for efficient soldering and secure connection in the circuit.

Maximum On-state Current: 2.5 A

Capable of handling moderate currents for a wide range of applications.

Maximum Leakage Current: 1 mA

Ensures low power loss when the device is in the off-state, improving overall efficiency.

Repetitive Peak Reverse Voltage: 700 V

Suitable for high voltage applications, providing reliable performance under demanding conditions.

No. of Terminals: 2

Simplified connections and easy integration into circuit designs.

Package Style (Meter): SMALL OUTLINE

Compact size saves space on PCBs, ideal for applications with limited space.

Maximum Operating Temperature: 125 °C

Can operate in high-temperature environments without loss of performance.

Trigger Device Type: SCR

Designed for efficient and reliable switching of AC or DC loads.

Minimum Operating Temperature: -40 °C

Suitable for use in cold environments without impact on functionality.

Terminal Finish: MATTE TIN

Provides a durable and corrosion-resistant finish for reliable connections.

Terminal Position: SINGLE

Simplifies installation and reduces the risk of wiring errors.

Maximum RMS On-state Current: 4 A

Handles higher continuous currents efficiently, suitable for various applications.

Maximum DC Gate Trigger Voltage: 0.8 V

Provides precise control for triggering the SCR at low voltage levels.

Case Connection: ANODE

Allows for straightforward connection in circuits, reducing complexity in wiring.

Repetitive Peak Off-state Voltage: 700 V

Ensures reliable performance in high voltage applications with repetitive switching.

Minimum Critical Rate of Rise of Off-state Voltage: 5 V/us

Ensures smooth and reliable switching of the SCR to prevent damage.

Maximum Holding Current: 5 mA

Ensures that the SCR remains in the on-state even when the gate current is removed, providing stability in operation.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TS420-700B attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Additional Features:

SENSITIVE GATE

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

5 V/us

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

.8 V

Maximum Holding Current:

5 mA

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Maximum Leakage Current:

1 mA

Non Repetitive Peak On-state Current:

30 A

No. of Elements:

1

No. of Terminals:

2

Maximum On-state Current:

2.5 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

4 A

Repetitive Peak Off-state Voltage:

700 V

Repetitive Peak Reverse Voltage:

700 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

TS420-700B Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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