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TS420-700H

STMicroelectronics

TS420-700H by STMicroelectronics

TS420-700H by STMicroelectronics is a single SCR with a max on-state current of 2.5 A and can handle repetitive peak reverse voltages up to 700 V. It operates efficiently in temperatures from -40 °C to 125°C, making it ideal for power control applications. With a low gate trigger current of just 0.2 mA, it's perfect for compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 2,390 parts In-Stock

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2,390

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Digiode

USA . 1,878 parts In-Stock

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1,878

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Vyrian

USA . 1,280 parts In-Stock

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1,280

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 148 parts In-Stock

1+ parts

$3.896

100+ parts

-

1k+ parts

$3.507

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148

$3.896

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$3.507

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MKK Technologies

India . 321 parts In-Stock

1+ parts

$7.327

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321

$7.327

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DigiPath Technology Company

USA . 321 parts In-Stock

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$7.327

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321

$7.327

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Kepictronics

USA . 13,000 parts In-Stock

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13,000

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Corphita

USA . 1,278 parts In-Stock

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1,278

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Parana Technologies

USA . 1,073 parts In-Stock

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$4.658

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1,073

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$4.658

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Overview

Elevate your designs with the TS420-700H from STMicroelectronics, a leader in semiconductor innovation. This Silicon Controlled Rectifier (SCR) delivers unparalleled reliability and performance for a variety of applications, from power management to industrial controls. With its robust build and exceptional thermal resilience, the TS420-700H ensures long-lasting functionality while simplifying circuit design. Trust in STMicroelectronics' commitment to quality and experience the difference in efficiency and durability for your projects!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and resistance to environmental factors, making this SCR suitable for various applications.

Maximum DC Gate Trigger Current: 0.2 mA

A low gate trigger current requirement enhances the efficiency and reduces power consumption, making this SCR energy-efficient.

Configuration: SINGLE

The single configuration design allows for straightforward integration into circuits, simplifying installation and use.

Non Repetitive Peak On-state Current: 30 A

A high peak current capacity ensures that this SCR can handle demanding applications and surge conditions without damaging the component.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient stacking and PCB layout, optimizing space in electronic designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical connections and are ideal for high-current applications, ensuring reliability.

Maximum On-state Current: 2.5 A

This moderate on-state current rating allows for effective control in various electronic switching applications.

Maximum Leakage Current: 1 mA

Low leakage current enhances the overall efficiency by minimizing power loss during operation.

Repetitive Peak Reverse Voltage: 700 V

A high reverse voltage rating ensures reliable operation in high-voltage applications, providing safety and performance.

No. of Terminals: 3

Having three terminals facilitates easy connection and integration into circuits, accommodating different circuit configurations.

Package Style (Meter): IN-LINE

The in-line package style is convenient for assembly in both automated and manual processes, enhancing manufacturing efficiency.

Maximum Operating Temperature: 125 °C

A high operating temperature capability indicates robustness and suitability for environments with elevated temperatures.

Trigger Device Type: SCR

As an SCR, this device offers high reliability for controlling power and is ideal for handling large electrical loads.

Minimum Operating Temperature: -40 °C

The ability to function at low temperatures expands the application range into cold environments, increasing versatility.

Terminal Position: SINGLE

Single terminal positioning simplifies circuit design and layout, providing ease of use in various applications.

Maximum RMS On-state Current: 4 A

This rating indicates its capacity to manage current effectively without overheating, making it suitable for varied load conditions.

Maximum DC Gate Trigger Voltage: 0.8 V

A low gate trigger voltage requirement ensures that it can be easily controlled using low-voltage interfacing circuits.

Case Connection: ANODE

Anode connection design is standard, facilitating compatibility with many existing circuit designs.

Repetitive Peak Off-state Voltage: 700 V

This high off-state voltage allows for safe operation in circuits subjected to significant voltage spikes.

Minimum Critical Rate of Rise of Off-state Voltage: 5 V/us

This provides a measure of reliability in switching operations, ensuring stability against sudden voltage changes.

Maximum Holding Current: 5 mA

Low holding current ensures that the SCR can quickly turn off, making it ideal for fast-switching applications.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TS420-700H attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

5 V/us

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

.8 V

Maximum Holding Current:

5 mA

JESD-30 Code:

R-PSIP-T3

Maximum Leakage Current:

1 mA

Non Repetitive Peak On-state Current:

30 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

2.5 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

4 A

Repetitive Peak Off-state Voltage:

700 V

Repetitive Peak Reverse Voltage:

700 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

TS420-700H Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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