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TDA7439D

STMicroelectronics

TDA7439D by STMicroelectronics

STMicroelectronics TDA7439D is a BICMOS audio control IC with 3 tone bands, 100 dB channel separation, and 0.01% harmonic distortion. Ideal for applications requiring precise tone control in compact setups due to its small outline package and dual terminal position.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,906 parts In-Stock

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1,906

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Vyrian

USA . 990 parts In-Stock

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990

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Anansix

USA . 932 parts In-Stock

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932

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ComSIT Distribution GmbH

Germany . 80 parts In-Stock

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80

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,212 parts In-Stock

1+ parts

$1.968

100+ parts

-

1k+ parts

$1.771

10k+ parts

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1,212

$1.968

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$1.771

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MKK Technologies

India . 547 parts In-Stock

1+ parts

$3.700

100+ parts

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547

$3.700

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DigiPath Technology Company

USA . 547 parts In-Stock

1+ parts

$3.700

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547

$3.700

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A-Z Elektronik GmbH

Germany . 4,709 parts In-Stock

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4,709

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Corphita

USA . 3,603 parts In-Stock

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3,603

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Parana Technologies

USA . 254 parts In-Stock

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$2.353

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254

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$2.353

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Overview

Enhance your audio experience with the TDA7439D from STMicroelectronics, a leading manufacturer known for top-quality audio control ICs. Perfect for tone control circuits, this product offers exceptional channel separation of 100 dB and low harmonic distortion of just 0.01%. With its compact design and wide operating temperature range, this versatile IC is ideal for a variety of applications. Elevate your sound system with the TDA7439D and enjoy crystal-clear audio performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for portable or long-lasting applications.

Surface Mount: YES

Surface mount technology allows for easy and efficient soldering of the IC onto the circuit board, saving space and making assembly simpler.

Channel Separation: 100 dB

With a high channel separation of 100 dB, this tone control circuit ensures clear and distinct audio outputs for each channel, enhancing sound quality.

Harmonic Distortion: 0.01 %

The low harmonic distortion of 0.01% ensures that the audio signal remains clean and free from unwanted noise, resulting in high-quality sound output.

No. of Terminals: 28

The 28 terminals provide flexibility in connecting the IC to other components, allowing for customization and versatility in the audio control circuit design.

Technology: BICMOS

The use of BICMOS technology combines the benefits of both bipolar and CMOS technologies, offering high-speed operation and low power consumption for efficient performance.

Minimum Supply Voltage (Vsup): 6 V

The low minimum supply voltage of 6V enables the IC to operate efficiently in various low-power applications, making it suitable for a wide range of audio control systems.

Technical Specifications

Audio Control ICs TDA7439D attributes and parameters. Explore more Audio Control ICs devices from STMicroelectronics

Specs

Channel Separation:

100 dB

General IC Type:

Harmonic Distortion:

.01 %

JESD-30 Code:

R-PDSO-G28

Length:

17.9 mm

No. of Bands:

3

No. of Channels:

2

No. of Functions:

1

No. of Terminals:

28

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-10 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Maximum Seated Height:

2.65 mm

Maximum Supply Current:

10 mA

Maximum Supply Voltage (Vsup):

10.2 V

Minimum Supply Voltage (Vsup):

6 V

Surface Mount:

YES

Technology:

BICMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

7.5 mm

Trade Compliance

TDA7439D General Purpose ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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