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T835-400W

STMicroelectronics

T835-400W by STMicroelectronics

STMicroelectronics T835-400W is a 3-terminal TRIAC with max. DC gate trigger current of 35mA and max. RMS on-state current of 8A. Ideal for snubberless TRIAC applications, it operates b/w -40 °C to 125°C, featuring a repetitive peak off-state voltage of 400V in a plastic/epoxy package style.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,317 parts In-Stock

1+ parts

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3,317

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Anansix

USA . 2,357 parts In-Stock

1+ parts

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2,357

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Digiode

USA . 1,442 parts In-Stock

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1,442

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,324 parts In-Stock

1+ parts

$3.595

100+ parts

-

1k+ parts

$3.236

10k+ parts

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2,324

$3.595

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$3.236

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MKK Technologies

India . 707 parts In-Stock

1+ parts

$6.761

100+ parts

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707

$6.761

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DigiPath Technology Company

USA . 707 parts In-Stock

1+ parts

$6.761

100+ parts

-

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10k+ parts

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707

$6.761

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Parana Technologies

USA . 1,780 parts In-Stock

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100+ parts

$4.299

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1,780

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$4.299

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Corphita

USA . 106 parts In-Stock

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106

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Overview

Looking for a reliable and efficient solution for your TRIAC needs? Look no further than the T835-400W by STMicroelectronics. With a reputation for quality and innovation, STMicroelectronics delivers top-notch performance in their products. Whether you're working on lighting controls, motor speed controls or heating control applications, this TRIAC offers maximum RMS On-state current of 8A and a repetitive peak off-state voltage of 400V. Trust in STMicroelectronics to provide you with the value and reliability you need for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and reliability, making the product suitable for long-term use in various applications.

Maximum DC Gate Trigger Current: 35 mA

The high gate trigger current allows for efficient and reliable control of the TRIAC, ensuring smooth performance in switching applications.

Configuration: SINGLE

The single configuration simplifies the circuit design and installation process, making it easier to integrate the TRIAC into different systems.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for easy mounting and installation in various equipment and devices.

Terminal Form: THROUGH-HOLE

The through-hole terminal form provides a secure and reliable connection, ensuring stable operation of the TRIAC in different conditions.

No. of Terminals: 3

Having 3 terminals provides flexibility in connecting the TRIAC to external circuits, enabling versatile applications and control options.

Package Style (Meter): FLANGE MOUNT

The flange mount package style allows for easy and secure mounting on a surface, ensuring stability and efficient heat dissipation during operation.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, the TRIAC can perform reliably in various environments and applications without risk of overheating.

Trigger Device Type: SNUBBERLESS TRIAC

The snubberless TRIAC design reduces electromagnetic interference and improves performance, making it ideal for sensitive electronic applications.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature allows the TRIAC to function effectively in cold climates or harsh environmental conditions.

Terminal Finish: TIN LEAD

The tin lead terminal finish ensures reliable contact and low resistance, enhancing the overall performance and longevity of the TRIAC.

Terminal Position: SINGLE

The single terminal position simplifies the connection process and ensures proper alignment during installation, enhancing the reliability of the TRIAC.

Maximum RMS On-state Current: 8 A

With a high maximum RMS on-state current, the TRIAC can handle heavy loads and provide efficient switching capabilities in various power control applications.

Case Connection: ISOLATED

The isolated case connection enhances safety and prevents electrical interference, making the TRIAC suitable for high-power and industrial applications.

Repetitive Peak Off-state Voltage: 400 V

The high repetitive peak off-state voltage rating allows the TRIAC to withstand voltage spikes and surges, ensuring reliable operation in unpredictable electrical environments.

Technical Specifications

Triode For Alternating Current (TRIAC) T835-400W attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from STMicroelectronics

Specs

Additional Features:

SENSITIVE GATE

Case Connection:

Configuration:

Maximum DC Gate Trigger Current:

35 mA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

8 A

Repetitive Peak Off-state Voltage:

400 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

Trade Compliance

T835-400W Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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