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T835-600M

STMicroelectronics

T835-600M by STMicroelectronics

STMicroelectronics T835-600M is a TRIAC with 600V repetitive peak off-state voltage, 8A max RMS on-state current, and 1.75V max on-state voltage. It operates b/w -40 °C to 125°C, ideal for AC power control applications requiring high reliability and performance in various temperature conditions.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,949 parts In-Stock

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Anansix

USA . 1,410 parts In-Stock

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1,410

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Vyrian

USA . 1,246 parts In-Stock

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1,246

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 587 parts In-Stock

1+ parts

$2.963

100+ parts

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$2.667

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587

$2.963

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$2.667

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MKK Technologies

India . 2,284 parts In-Stock

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$5.572

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$5.572

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DigiPath Technology Company

USA . 2,284 parts In-Stock

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$5.572

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2,284

$5.572

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Corphita

USA . 1,824 parts In-Stock

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Parana Technologies

USA . 289 parts In-Stock

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$3.543

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289

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$3.543

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Overview

Discover the unparalleled quality and reliability of the T835-600M TRIAC by STMicroelectronics. As a leading manufacturer in the industry, STMicroelectronics ensures top-notch performance and durability in every product they create. This versatile TRIAC is ideal for a wide range of applications, offering customers the perfect balance of value and efficiency. Whether you're looking to control AC power in home appliances or industrial equipment, the T835-600M provides unmatched benefits and advantages that will elevate your projects to new heights. Choose STMicroelectronics for superior quality and performance that you can trust.

Feature Benefit Bullets

Maximum On-state Voltage: 1.75 V

Low maximum on-state voltage ensures efficient conduction, leading to lower power dissipation and better performance.

Maximum DC Gate Trigger Current: 35 mA

High maximum DC gate trigger current allows for reliable triggering of the TRIAC, ensuring consistent operation.

Maximum Leakage Current: 0.01 mA

Low maximum leakage current indicates minimal current flowing when the TRIAC is in the off-state, enhancing efficiency and safety.

Maximum Operating Temperature: 125 °C

Wide maximum operating temperature range allows for versatile applications in different environments without the risk of overheating.

Trigger Device Type: TRIAC

Being a TRIAC ensures bidirectional control of alternating current, making it suitable for a wide range of AC power control applications.

Terminal Finish: Matte Tin (Sn)

Matte tin terminal finish provides good conductivity and solderability, ensuring reliable connections in electronic circuitry.

Maximum RMS On-state Current: 8 A

High maximum RMS on-state current capability allows the TRIAC to handle high current loads, making it suitable for power control applications.

Maximum DC Gate Trigger Voltage: 1.5 V

Low maximum DC gate trigger voltage ensures efficient triggering with minimal gate drive power requirements.

Repetitive Peak Off-state Voltage: 600 V

High repetitive peak off-state voltage rating allows the TRIAC to safely block high voltages while in the off-state, ensuring device reliability.

Minimum Critical Rate of Rise of Commutation Voltage: 4.5 V/us

Low minimum critical rate of rise of commutation voltage enables smooth switching transitions, reducing EMI and improving overall performance.

Minimum Critical Rate of Rise of Off-state Voltage: 250 V/us

Fast minimum critical rate of rise of off-state voltage helps in rapid turn-off of the TRIAC, minimizing power dissipation and improving efficiency.

Maximum Holding Current: 35 mA

High maximum holding current ensures the TRIAC remains in the on-state without unintentional turn-off, providing stable operation in various load conditions.

Technical Specifications

Triode For Alternating Current (TRIAC) T835-600M attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from STMicroelectronics

Specs

Minimum Critical Rate of Rise of Commutation Voltage:

4.5 V/us

Minimum Critical Rate of Rise of Off-state Voltage:

250 V/us

Maximum DC Gate Trigger Current:

35 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

35 mA

JESD-609 Code:

e3

Maximum Leakage Current:

.01 mA

Maximum On-state Voltage:

1.75 V

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Maximum RMS On-state Current:

8 A

Repetitive Peak Off-state Voltage:

600 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn)

Trigger Device Type:

Trade Compliance

T835-600M Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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