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T810-600H

STMicroelectronics

T810-600H by STMicroelectronics

T810-600H by STMicroelectronics is a single TRIAC designed for AC applications, featuring a max RMS on-state current of 8 A and a repetitive peak off-state voltage of 600 V. It operates b/w -40 °C to 125°C, making it ideal for robust environments. With a gate trigger current of just 10 mA, it's perfect for efficient control in electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,605 parts In-Stock

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7,605

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Digiode

USA . 2,595 parts In-Stock

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2,595

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Anansix

USA . 2,006 parts In-Stock

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2,006

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 193 parts In-Stock

1+ parts

$3.528

100+ parts

-

1k+ parts

$3.175

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193

$3.528

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$3.175

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MKK Technologies

India . 1,212 parts In-Stock

1+ parts

$6.635

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1,212

$6.635

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DigiPath Technology Company

USA . 1,212 parts In-Stock

1+ parts

$6.635

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1,212

$6.635

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AZTECH Wire

Italy . 543 parts In-Stock

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$14.620

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543

$14.620

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Perfect Parts

USA . 26,320 parts In-Stock

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26,320

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Kepictronics

USA . 13,000 parts In-Stock

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13,000

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Cyclops Electronics Ltd (Excess)

UK . 11,750 parts In-Stock

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11,750

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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4,000

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Parana Technologies

USA . 2,037 parts In-Stock

1+ parts

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$4.218

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2,037

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$4.218

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Corphita

USA . 386 parts In-Stock

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386

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Overview

Elevate your designs with the T810-600H TRIAC from STMicroelectronics, a leader in innovation and quality. This robust component excels in managing high voltage applications, ensuring reliable performance across various environments—from -40 °C to 125°C. With its compact design and effortless integration, it empowers engineers to create efficient circuits in home appliances, motor control, and lighting systems. Choose the T810-600H for unparalleled reliability and peace of mind in every project!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy body material ensures longevity and resistance to environmental factors, making this TRIAC ideal for robust applications.

Maximum DC Gate Trigger Current: 10 mA

With a maximum gate trigger current of just 10 mA, this TRIAC operates efficiently and minimizes power consumption during control operations.

Configuration: SINGLE

The single configuration allows for simpler circuit designs while maintaining effective control of the AC power.

Package Shape: RECTANGULAR

The rectangular package shape provides efficient space management in PCB designs, allowing for easier integration in compact applications.

Terminal Form: THROUGH-HOLE

Through-hole terminal form enhances the mechanical stability of the TRIAC in various applications, making installation easier and more secure.

No. of Terminals: 3

Three terminals provide the necessary connections for functional operation, offering versatile integration options in circuits.

Package Style (Meter): IN-LINE

The in-line package style facilitates easier placement on PCBs and saves additional space compared to bulky alternatives.

Maximum Operating Temperature: 125 °C

A high operating temperature rating of 125 °C allows this TRIAC to function effectively in demanding environments, enhancing reliability.

Trigger Device Type: 4 QUADRANT LOGIC LEVEL TRIAC

Being a 4 quadrant logic level TRIAC ensures its use in both resistive and inductive load applications, providing great versatility.

Minimum Operating Temperature: -40 °C

The ability to operate down to -40 °C ensures this TRIAC can be used in extreme environments, broadening its application range.

Terminal Finish: TIN

The tin terminal finish enhances solderability, improving assembly processes and ensuring reliable electrical connections.

Terminal Position: SINGLE

With a single terminal position, the TRIAC simplifies circuit design and increases layout possibilities for engineers.

Maximum RMS On-state Current: 8 A

A maximum RMS on-state current of 8 A allows this TRIAC to handle substantial power loads, making it suitable for various applications.

Maximum DC Gate Trigger Voltage: 1.3 V

A low gate trigger voltage of 1.3 V enhances compatibility with low-voltage control systems, making it easy to integrate.

Case Connection: MAIN TERMINAL 2

The main terminal connection design improves the TRIAC's performance and reliability in controlling AC loads effectively.

Repetitive Peak Off-state Voltage: 600 V

The ability to withstand up to 600 V in off-state demonstrates high voltage handling capability, suitable for significant AC loads.

Minimum Critical Rate of Rise of Off-state Voltage: 40 V/us

A high critical rate of rise indicates robust operation under fast transient conditions, enhancing reliability in dynamic applications.

Maximum Holding Current: 15 mA

With a maximum holding current of 15 mA, this TRIAC ensures efficient control and power management in various circuit applications.

Technical Specifications

Triode For Alternating Current (TRIAC) T810-600H attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from STMicroelectronics

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

40 V/us

Maximum DC Gate Trigger Current:

10 mA

Maximum DC Gate Trigger Voltage:

1.3 V

Maximum Holding Current:

15 mA

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

8 A

Repetitive Peak Off-state Voltage:

600 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

Trade Compliance

T810-600H Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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