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T810-400K

STMicroelectronics

T810-400K by STMicroelectronics

STMicroelectronics T810-400K is a 4-quadrant logic level TRIAC with max. RMS on-state current of 8A and repetitive peak off-state voltage of 400V. It operates b/w -40 °C to 125°C, suitable for AC power control applications requiring a DC gate trigger current of 10mA.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,453 parts In-Stock

1+ parts

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1k+ parts

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2,453

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Vyrian

USA . 2,096 parts In-Stock

1+ parts

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2,096

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Anansix

USA . 1,565 parts In-Stock

1+ parts

-

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1,565

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,389 parts In-Stock

1+ parts

$2.222

100+ parts

-

1k+ parts

$2.000

10k+ parts

-

1,389

$2.222

-

$2.000

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MKK Technologies

India . 100 parts In-Stock

1+ parts

$4.178

100+ parts

-

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100

$4.178

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DigiPath Technology Company

USA . 100 parts In-Stock

1+ parts

$4.178

100+ parts

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100

$4.178

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Parana Technologies

USA . 684 parts In-Stock

1+ parts

-

100+ parts

$2.656

1k+ parts

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684

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$2.656

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Corphita

USA . 249 parts In-Stock

1+ parts

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249

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Overview

Enhance your electronic projects with the T810-400K by STMicroelectronics, a top-quality TRIAC component designed to deliver reliable performance. Manufactured by industry leader STMicroelectronics, this TRIAC offers exceptional value and benefits for various applications. With a maximum RMS on-state current of 8A and a repetitive peak off-state voltage of 400V, this TRIAC is ideal for controlling AC power in a wide range of devices. Trust STMicroelectronics for superior quality components that provide unmatched efficiency and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the TRIAC, ensuring a longer lifespan.

Maximum DC Gate Trigger Current: 10 mA

Allows for precise and controlled triggering of the TRIAC, ensuring reliable performance in a variety of applications.

Configuration: SINGLE

Simplified design and easy integration into circuit systems, making it versatile and user-friendly.

Surface Mount: YES

Enables easy and secure mounting on circuit boards, saving space and increasing efficiency.

Package Shape: RECTANGULAR

Compact and efficient design that fits well in electronic devices and systems.

Terminal Form: GULL WING

Facilitates easy soldering and connection of the TRIAC to circuit boards, ensuring a secure and reliable connection.

No. of Terminals: 3

Simplified wiring and connection process, reducing complexity and enhancing ease of use.

Package Style (Meter): FLANGE MOUNT

Easy and secure mounting on electronic devices and systems, providing stability and reliability.

Maximum Operating Temperature: 125 °C

High tolerance to heat, ensuring stable performance even in high-temperature environments.

Trigger Device Type: 4 QUADRANT LOGIC LEVEL TRIAC

Enhanced control and precision in triggering the TRIAC, ensuring efficiency and reliability in various applications.

Minimum Operating Temperature: -40 °C

Wide range of operating temperatures, allowing for use in both extreme cold and hot conditions.

Terminal Finish: TIN LEAD

Provides corrosion resistance and ensures a reliable electrical connection for long-term performance.

Terminal Position: SINGLE

Simplified installation and connection process, reducing the risk of errors and complications.

Maximum RMS On-state Current: 8 A

Can handle high current loads, making it suitable for a wide range of applications requiring high power output.

Repetitive Peak Off-state Voltage: 400 V

Can withstand high voltage levels, ensuring safety and reliability in various electrical systems.

Technical Specifications

Triode For Alternating Current (TRIAC) T810-400K attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from STMicroelectronics

Specs

Additional Features:

SENSITIVE GATE

Configuration:

Maximum DC Gate Trigger Current:

10 mA

JESD-30 Code:

R-PSFM-G3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

8 A

Repetitive Peak Off-state Voltage:

400 V

Sub-Category:

TRIACs

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

Trigger Device Type:

Trade Compliance

T810-400K Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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