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T1613NH

STMicroelectronics

T1613NH by STMicroelectronics

STMicroelectronics T1613NH is a TRIAC with 16A RMS current, 800V repetitive peak off-state voltage, and 50mA DC gate trigger current. It is used in applications requiring AC power control like dimmers, motor speed controllers, and heating control systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,618 parts In-Stock

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4,618

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Anansix

USA . 2,430 parts In-Stock

1+ parts

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2,430

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Huijzer Components

Netherlands . 267 parts In-Stock

1+ parts

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267

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Digiode

USA . 60 parts In-Stock

1+ parts

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60

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J2 Sourcing AB

Sweden . 19 parts In-Stock

1+ parts

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19

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 360 parts In-Stock

1+ parts

$1.974

100+ parts

-

1k+ parts

$1.777

10k+ parts

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360

$1.974

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$1.777

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MKK Technologies

India . 2,340 parts In-Stock

1+ parts

$3.713

100+ parts

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2,340

$3.713

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DigiPath Technology Company

USA . 2,340 parts In-Stock

1+ parts

$3.713

100+ parts

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2,340

$3.713

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Corphita

USA . 4,346 parts In-Stock

1+ parts

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4,346

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Parana Technologies

USA . 518 parts In-Stock

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100+ parts

$2.361

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518

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$2.361

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Assy Fe

Spain . 5 parts In-Stock

1+ parts

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5

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Overview

Discover the high-quality and reliable T1613NH by STMicroelectronics, a versatile Triode For Alternating Current (TRIAC) that offers exceptional performance in a variety of applications. With a maximum RMS on-state current of 16A and a repetitive peak off-state voltage of 800V, this TRIAC provides customers with the value and benefits they need for their projects. Whether you're looking to control power supplies or regulate heating elements, the T1613NH delivers precise and efficient operation every time. Trust in STMicroelectronics for superior technology that meets your needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection against external factors, ensuring long-lasting performance.

Maximum DC Gate Trigger Current: 50 mA

Allows for precise triggering of the device, ensuring accurate control and operation.

Configuration: SINGLE

Simplified design with single configuration for easier installation and maintenance.

Package Shape: RECTANGULAR

Compact rectangular shape allows for efficient use of space in the application.

Terminal Form: THROUGH-HOLE

Easy and secure mounting through holes, providing stability in the circuit.

Maximum Leakage Current: 2.5 mA

Low leakage current helps in reducing power loss and improving efficiency.

No. of Terminals: 3

Simplified connection setup with only three terminals required.

Package Style (Meter): FLANGE MOUNT

Easy mounting on flange for secure installation in the application.

Maximum Operating Temperature: 125 °C

Withstands high temperatures, ensuring reliable operation even in demanding environments.

Trigger Device Type: TRIAC

Triode for Alternating Current design allows for efficient AC power control.

Minimum Operating Temperature: -40 °C

Wide operating temperature range enables usage in various environmental conditions.

Terminal Finish: MATTE TIN

Matte tin finish provides corrosion resistance and low contact resistance for improved performance.

Terminal Position: SINGLE

Simplified terminal position for easy connection setup.

Maximum RMS On-state Current: 16 A

High current rating allows for efficient handling of AC currents in the circuit.

Maximum DC Gate Trigger Voltage: 2.5 V

Low trigger voltage required for efficient operation and control of the triac.

Repetitive Peak Off-state Voltage: 800 V

High off-state voltage rating ensures safe operation and protection of the device.

Minimum Critical Rate of Rise of Off-state Voltage: 500 V/us

High rate of rise of off-state voltage allows for quick response and protection against voltage fluctuations.

Maximum Holding Current: 150 mA

Sufficient holding current for stable operation and prevention of false triggering.

Technical Specifications

Triode For Alternating Current (TRIAC) T1613NH attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from STMicroelectronics

Specs

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

500 V/us

Maximum DC Gate Trigger Current:

50 mA

Maximum DC Gate Trigger Voltage:

2.5 V

Maximum Holding Current:

150 mA

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Leakage Current:

2.5 mA

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Maximum RMS On-state Current:

16 A

Repetitive Peak Off-state Voltage:

800 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

Trade Compliance

T1613NH Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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