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T1612SH

STMicroelectronics

T1612SH by STMicroelectronics

T1612SH by STMicroelectronics is a TRIAC with 16A RMS on-state current, 700V repetitive peak off-state voltage, and 50mA max DC gate trigger current. Ideal for applications requiring precise AC power control such as dimmers, motor speed controllers, and heating control systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,860 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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4,860

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Digiode

USA . 2,621 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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2,621

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Anansix

USA . 1,253 parts In-Stock

1+ parts

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100+ parts

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10k+ parts

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1,253

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,273 parts In-Stock

1+ parts

$4.501

100+ parts

-

1k+ parts

$4.051

10k+ parts

-

1,273

$4.501

-

$4.051

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MKK Technologies

India . 1,475 parts In-Stock

1+ parts

$8.463

100+ parts

-

1k+ parts

-

10k+ parts

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1,475

$8.463

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DigiPath Technology Company

USA . 1,475 parts In-Stock

1+ parts

$8.463

100+ parts

-

1k+ parts

-

10k+ parts

-

1,475

$8.463

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Corphita

USA . 3,591 parts In-Stock

1+ parts

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3,591

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Parana Technologies

USA . 1,912 parts In-Stock

1+ parts

-

100+ parts

$5.381

1k+ parts

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10k+ parts

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1,912

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$5.381

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Overview

Looking for a reliable and high-quality TRIAC for your alternating current applications? Look no further than the T1612SH by STMicroelectronics. With a reputation for excellence in the industry, STMicroelectronics delivers unparalleled performance and durability. Whether you're working on lighting controls, motor speed controls, or heating appliances, this TRIAC offers maximum functionality with its 4 quadrant logic level design. Trust in STMicroelectronics to provide you with the value and benefits you need to succeed in your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection, making the product durable and reliable.

Maximum DC Gate Trigger Current: 50 mA

Allows for precise control over triggering the triode, ensuring reliable performance.

Configuration: SINGLE

Simplified design and installation process, ideal for single applications.

Package Shape: RECTANGULAR

Efficient use of space and easy integration into various systems or devices.

Terminal Form: THROUGH-HOLE

Secure and stable connection to the circuit board for consistent performance.

Maximum Leakage Current: 2.5 mA

Low leakage current ensures energy efficiency and reduces heat dissipation.

No. of Terminals: 3

Simple and straightforward connection setup for easy installation.

Package Style (Meter): FLANGE MOUNT

Easy mounting onto surfaces for convenient placement.

Maximum Operating Temperature: 125 °C

Ability to withstand high temperatures, making it suitable for various operating conditions.

Trigger Device Type: 4 QUADRANT LOGIC LEVEL TRIAC

Advanced logic level trigger for precise and accurate control in all quadrants.

Minimum Operating Temperature: -40 °C

Wide temperature range capability, suitable for both low and high-temperature environments.

Terminal Finish: MATTE TIN

Provides excellent conductivity and corrosion resistance for long-lasting performance.

Terminal Position: SINGLE

Simplified connection setup for quick and easy installation.

Maximum RMS On-state Current: 16 A

High current rating for efficient power handling and reliable operation.

Maximum DC Gate Trigger Voltage: 2.5 V

Low trigger voltage for efficient operation and control.

Repetitive Peak Off-state Voltage: 700 V

High off-state voltage rating for enhanced safety and protection.

Minimum Critical Rate of Rise of Off-state Voltage: 500 V/us

Quick response to changes in voltage levels, ensuring stability and protection.

Maximum Holding Current: 100 mA

High holding current for improved reliability and stability during operation.

Technical Specifications

Triode For Alternating Current (TRIAC) T1612SH attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from STMicroelectronics

Specs

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

500 V/us

Maximum DC Gate Trigger Current:

50 mA

Maximum DC Gate Trigger Voltage:

2.5 V

Maximum Holding Current:

100 mA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Leakage Current:

2.5 mA

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

16 A

Repetitive Peak Off-state Voltage:

700 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

Trade Compliance

T1612SH Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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