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T1613MH

STMicroelectronics

T1613MH by STMicroelectronics

T1613MH by STMicroelectronics is a TRIAC with 16A RMS on-state current, 600V repetitive peak off-state voltage, and 50mA max DC gate trigger current. It is used in applications requiring AC power control such as dimmer switches, motor speed controls, and heating control systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 617 parts In-Stock

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Anansix

USA . 436 parts In-Stock

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Digiode

USA . 302 parts In-Stock

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Corel Iberica Componentes, S.L.

Spain . 279 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 135 parts In-Stock

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 374 parts In-Stock

1+ parts

$2.910

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$2.619

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374

$2.910

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$2.619

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MKK Technologies

India . 2,103 parts In-Stock

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$5.472

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$5.472

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DigiPath Technology Company

USA . 2,103 parts In-Stock

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$5.472

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2,103

$5.472

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Corphita

USA . 3,171 parts In-Stock

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Parana Technologies

USA . 2,156 parts In-Stock

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$3.479

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$3.479

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Assy Fe

Spain . 454 parts In-Stock

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Overview

Discover the power and reliability of the T1613MH by STMicroelectronics, a premium TRIAC component designed for high-performance applications. With a maximum RMS On-state Current of 16A and a Repetitive Peak Off-state Voltage of 600V, this TRIAC offers exceptional quality and durability. From lighting control to motor speed regulation, the T1613MH provides seamless operation and precise control. Trust STMicroelectronics for top-of-the-line components that deliver unparalleled value and performance. Upgrade your projects with the T1613MH today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the TRIAC.

Maximum DC Gate Trigger Current: 50 mA

Allows for precise control of the TRIAC's switching behavior.

Configuration: SINGLE

Simplified design and ease of use for applications requiring a single TRIAC.

Package Shape: RECTANGULAR

Facilitates easy mounting and integration into existing systems.

Terminal Form: THROUGH-HOLE

Soldering onto a PCB or through a panel is straightforward and reliable.

Maximum Leakage Current: 2.5 mA

Ensures low power consumption in standby mode for energy efficiency.

No. of Terminals: 3

Simplifies wiring connections and reduces the chance of errors during installation.

Package Style (Meter): FLANGE MOUNT

Allows for secure installation and efficient heat dissipation.

Maximum Operating Temperature: 125 °C

Suitable for a wide range of operating conditions and environments.

Trigger Device Type: TRIAC

Designed specifically for alternating current applications, ensuring optimal performance.

Minimum Operating Temperature: -40 °C

Operates reliably in cold environments without compromising performance.

Terminal Finish: MATTE TIN

Provides excellent conductivity for reliable signal transmission.

Terminal Position: SINGLE

Simplifies installation and reduces complexity in wiring connections.

Maximum RMS On-state Current: 16 A

Handles high current loads with ease for demanding applications.

Maximum DC Gate Trigger Voltage: 2.5 V

Compatible with standard control systems for easy integration.

Repetitive Peak Off-state Voltage: 600 V

Ensures safe operation in high-voltage applications.

Minimum Critical Rate of Rise of Off-state Voltage: 500 V/us

Protects the TRIAC from voltage transients and spikes for reliable operation.

Maximum Holding Current: 150 mA

Maintains the ON state of the TRIAC under certain conditions, ensuring stability.

Technical Specifications

Triode For Alternating Current (TRIAC) T1613MH attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from STMicroelectronics

Specs

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

500 V/us

Maximum DC Gate Trigger Current:

50 mA

Maximum DC Gate Trigger Voltage:

2.5 V

Maximum Holding Current:

150 mA

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Leakage Current:

2.5 mA

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Maximum RMS On-state Current:

16 A

Repetitive Peak Off-state Voltage:

600 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

Trade Compliance

T1613MH Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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