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T1205-800G-TR

STMicroelectronics

T1205-800G-TR by STMicroelectronics

T1205-800G-TR by STMicroelectronics is a single TRIAC with 12A max RMS on-state current and 800V repetitive peak off-state voltage. It operates b/w -40 to 125 °C, suitable for snubberless TRIAC applications in various industries. The package is surface mountable with GULL WING terminals, making it ideal for compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 1,711 parts In-Stock

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1,711

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Vyrian

USA . 1,630 parts In-Stock

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1,630

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Digiode

USA . 183 parts In-Stock

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183

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,735 parts In-Stock

1+ parts

$2.294

100+ parts

-

1k+ parts

$2.065

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1,735

$2.294

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$2.065

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MKK Technologies

India . 1,566 parts In-Stock

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$4.315

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1,566

$4.315

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DigiPath Technology Company

USA . 1,566 parts In-Stock

1+ parts

$4.315

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1,566

$4.315

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Corphita

USA . 4,500 parts In-Stock

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4,500

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Parana Technologies

USA . 1,363 parts In-Stock

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$2.743

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1,363

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$2.743

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Overview

Looking for a reliable and high-performance Triode For Alternating Current (TRIAC)? Look no further than the T1205-800G-TR by STMicroelectronics. With a reputation for top-quality products, STMicroelectronics delivers excellence in every component they produce. This TRIAC is perfect for a wide range of applications where precise control over AC power is needed. Offering a maximum RMS On-state Current of 12A and a Repetitive Peak Off-state Voltage of 800V, this TRIAC provides exceptional performance and reliability. Trust STMicroelectronics to deliver superior quality and unmatched value with the T1205-800G-TR.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the internal components of the TRIAC, ensuring a longer lifespan.

Maximum DC Gate Trigger Current: 5 mA

With a low trigger current requirement, this TRIAC is easy to control and can be triggered efficiently with minimal power.

Configuration: SINGLE

The single configuration simplifies the wiring and integration process, making it easier to use in various applications.

Surface Mount: YES

The surface mount capability allows for easy installation and space-saving on the circuit board, making it ideal for compact designs.

Maximum Leakage Current: 1 mA

Low leakage current ensures minimal power wastage and improved efficiency in the operation of the TRIAC.

No. of Terminals: 2

Having only 2 terminals simplifies the connections and makes it easier to integrate into circuits, reducing the risk of wiring errors.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this TRIAC can withstand challenging environments and operate reliably without overheating.

Trigger Device Type: SNUBBERLESS TRIAC

The snubberless design of the TRIAC helps reduce electromagnetic interference and eliminates the need for external components, simplifying the circuit design.

Repetitive Peak Off-state Voltage: 800 V

The high off-state voltage rating makes this TRIAC suitable for high voltage applications, providing reliable switching capabilities.

Technical Specifications

Triode For Alternating Current (TRIAC) T1205-800G-TR attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from STMicroelectronics

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

20 V/us

Maximum DC Gate Trigger Current:

5 mA

Maximum DC Gate Trigger Voltage:

1.3 V

Maximum Holding Current:

10 mA

JESD-30 Code:

R-PSSO-G2

Maximum Leakage Current:

1 mA

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

12 A

Repetitive Peak Off-state Voltage:

800 V

Sub-Category:

TRIACs

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

Trigger Device Type:

Trade Compliance

T1205-800G-TR Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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