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T1205-600R

STMicroelectronics

T1205-600R by STMicroelectronics

STMicroelectronics T1205-600R is a TRIAC with 12A RMS current, 600V repetitive peak off-state voltage, and 1.3V max DC gate trigger voltage. It operates b/w -40 °C to 125°C, ideal for AC power control applications requiring precise triggering and low leakage current.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 2,238 parts In-Stock

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Vyrian

USA . 1,417 parts In-Stock

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Anansix

USA . 545 parts In-Stock

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545

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 91 parts In-Stock

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$4.538

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$4.085

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91

$4.538

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MKK Technologies

India . 1,116 parts In-Stock

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$8.534

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DigiPath Technology Company

USA . 1,116 parts In-Stock

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$8.534

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$8.534

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Parana Technologies

USA . 1,585 parts In-Stock

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$5.426

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$5.426

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Corphita

USA . 708 parts In-Stock

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708

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Overview

Unlock the power of efficient and reliable control with the T1205-600R by STMicroelectronics. As a leading manufacturer in the industry, STMicroelectronics delivers top-quality TRIACs for a variety of applications. This TRIAC offers seamless performance with a maximum RMS On-state Current of 12A and a repetitive peak off-state voltage of 600V. Trust in STMicroelectronics to provide you with the value, benefits, and advantages you need for your next project. Elevate your system's performance with the T1205-600R today.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 5 mA

The low DC gate trigger current ensures efficient and reliable operation of the TRIAC, making it suitable for various applications.

Maximum Leakage Current: 1 mA

The low leakage current helps in reducing power losses and improving the overall efficiency of the device.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this TRIAC can withstand demanding thermal conditions without compromising its performance.

Trigger Device Type: TRIAC

Being a TRIAC, this device is capable of conducting current in both directions, making it ideal for AC switching applications.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature ensures the TRIAC can operate reliably even in cold environments.

Maximum RMS On-state Current: 12 A

With a high maximum RMS on-state current rating, this TRIAC can handle heavy loads and high current applications with ease.

Maximum DC Gate Trigger Voltage: 1.3 V

The low DC gate trigger voltage helps in reducing the power consumption of the control circuit while still effectively triggering the device.

Repetitive Peak Off-state Voltage: 600 V

The high off-state voltage rating allows the TRIAC to control high voltage circuits, making it versatile and suitable for a wide range of applications.

Minimum Critical Rate of Rise of Off-state Voltage: 20 V/us

The TRIAC can respond quickly to changes in the off-state voltage, ensuring fast and efficient operation in dynamic switching applications.

Maximum Holding Current: 10 mA

The high holding current ensures that the TRIAC remains in conduction state even after the gate current is removed, improving the reliability of the device.

Technical Specifications

Triode For Alternating Current (TRIAC) T1205-600R attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from STMicroelectronics

Specs

Minimum Critical Rate of Rise of Off-state Voltage:

20 V/us

Maximum DC Gate Trigger Current:

5 mA

Maximum DC Gate Trigger Voltage:

1.3 V

Maximum Holding Current:

10 mA

Maximum Leakage Current:

1 mA

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Maximum RMS On-state Current:

12 A

Repetitive Peak Off-state Voltage:

600 V

Sub-Category:

TRIACs

Surface Mount:

NO

Trigger Device Type:

Trade Compliance

T1205-600R Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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