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STF5N95K5

STMicroelectronics

STF5N95K5 by STMicroelectronics

STF5N95K5 by STMicroelectronics is a N-CHANNEL FET with 950V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 14A IDM, 70mJ EAS, and 25W Abs Power Dissipation. Operating in ENHANCEMENT MODE, it has -55 to 150 °C temp range and metal-oxide semiconductor technology.

Median Price

$2.510

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 855 parts In-Stock

1+ parts

$2.510

100+ parts

$1.110

1k+ parts

$0.816

10k+ parts

$0.780

855

$2.510

$1.110

$0.816

$0.780

DigiKey

USA . 217 parts In-Stock

1+ parts

$2.510

100+ parts

$1.106

1k+ parts

$0.817

10k+ parts

$0.718

217

$2.510

$1.106

$0.817

$0.718

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,431 parts In-Stock

1+ parts

$1.710

100+ parts

-

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3,431

$1.710

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Vyrian

USA . 4,061 parts In-Stock

1+ parts

$1.800

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-

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4,061

$1.800

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Cyclops Electronics Ltd

UK . 100,000 parts In-Stock

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Anansix

USA . 707 parts In-Stock

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707

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 302 parts In-Stock

1+ parts

$1.319

100+ parts

-

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$1.187

10k+ parts

-

302

$1.319

-

$1.187

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Corphita

USA . 1,241 parts In-Stock

1+ parts

$1.620

100+ parts

-

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$1.620

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Component Stockers USA

USA . 3,776 parts In-Stock

1+ parts

$1.760

100+ parts

$1.210

1k+ parts

-

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3,776

$1.760

$1.210

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MKK Technologies

India . 2,000 parts In-Stock

1+ parts

$2.481

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2,000

$2.481

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DigiPath Technology Company

USA . 2,000 parts In-Stock

1+ parts

$2.481

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$2.481

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Andel Nordic

Denmark . 5,299 parts In-Stock

1+ parts

$6.908

100+ parts

-

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$6.632

10k+ parts

$6.632

5,299

$6.908

-

$6.632

$6.632

Microchip USA

USA . 3,332 parts In-Stock

1+ parts

$14.105

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3,332

$14.105

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iBuyXS LLC

. 50,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,941 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,138 parts In-Stock

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3,138

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Perfect Parts

USA . 2,072 parts In-Stock

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2,072

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Parana Technologies

USA . 1,999 parts In-Stock

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$1.577

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$1.577

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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1,000

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Kepictronics

USA . 884 parts In-Stock

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Overview

Power up your projects with the STF5N95K5 by STMicroelectronics, a high-quality Power Field Effect Transistor designed for switching applications. Manufactured by industry leader STMicroelectronics, this N-CHANNEL transistor boasts a robust design with a built-in diode for enhanced performance. With a minimum DS Breakdown Voltage of 950V and a maximum Pulsed Drain Current of 14A, this transistor ensures reliable operation even in demanding conditions. Trust STF5N95K5 to deliver efficient power management solutions for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good thermal conductivity and electrical insulation, contributing to the overall reliability of the transistor.

Polarity or Channel Type: N-CHANNEL

N-channel FETs generally have lower ON resistance and higher efficiency compared to P-channel FETs.

Minimum DS Breakdown Voltage: 950 V

Can handle high voltages, making it suitable for applications where high electrical isolation is required.

Maximum Pulsed Drain Current (IDM): 14 A

Capable of handling high peak currents during switching operations, ensuring reliability under heavy loads.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor FETs are known for their high switching speeds, low gate capacitance, and excellent high-frequency performance.

Maximum Operating Temperature: 150 °C

Can operate efficiently in high-temperature environments without risking overheating or degradation of performance.

Technical Specifications

Power Field Effect Transistors (FET) STF5N95K5 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Additional Features:

AVALANCHE ENERGY RATED

Avalanche Energy Rating (EAS):

70 mJ

Case Connection:

ISOLATED

Minimum DS Breakdown Voltage:

950 V

Maximum Drain Current (ID):

3.5 A

Maximum Drain-Source On Resistance:

2.5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

1 pF

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

14 A

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

57 ns

Maximum Turn On Time (ton):

28 ns

Trade Compliance

STF5N95K5 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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