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M74HC541RM13TR

STMicroelectronics

M74HC541RM13TR by STMicroelectronics

M74HC541RM13TR by STMicroelectronics is an 8-bit bus driver with a propagation delay of 26 ns and operates b/w 2-6 V. It features a compact SO package, ideal for military applications due to its high temp range (-55 °C to 125°C). This CMOS device supports true output polarity and has a load capacitance of 50 pF.

Median Price

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7

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1k+

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Vyrian

USA . 6,569 parts In-Stock

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Rebound Electronics

UK . 3,126 parts In-Stock

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Anansix

USA . 1,492 parts In-Stock

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ComSIT Distribution GmbH

Germany . 1,271 parts In-Stock

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Digiode

USA . 570 parts In-Stock

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Inventory MP

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Bristol Electronics

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Andel Nordic

Denmark . 2,753 parts In-Stock

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$8.951

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$8.593

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$8.593

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Microchip USA

USA . 176 parts In-Stock

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$9.079

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AZTECH Wire

Italy . 60 parts In-Stock

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$12.280

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IDEA Electronic Components Group

UK . 1,640 parts In-Stock

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$20.683

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MKK Technologies

India . 1,338 parts In-Stock

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DigiPath Technology Company

USA . 1,338 parts In-Stock

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Authorized Procurement Solutions

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Corphita

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Alle Elektronik GmbH

Germany . 3,638 parts In-Stock

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Perfect Parts

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Assy Fe

Spain . 1,000 parts In-Stock

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Parana Technologies

USA . 954 parts In-Stock

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Overview

Unlock unparalleled performance with the M74HC541RM13TR from STMicroelectronics—a leader in reliability and innovation. This robust 8-bit bus driver/transceiver excels in demanding applications, ensuring swift signal integrity and minimal delays. Designed for versatility, it thrives in automotive and industrial settings where quality matters most. Experience enhanced efficiency and durability, backed by ST's commitment to excellence that empowers your projects to succeed.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material ensures durability and reliability under various conditions, making the product suitable for various applications.

Propagation Delay At Nominal Supply: 26 ns

A low propagation delay indicates high-speed performance, allowing for faster data transmission and improved overall system performance.

Surface Mount: YES

The surface mount design allows for compact PCB layouts and contributes to the miniaturization of electronic devices.

Package Shape: RECTANGULAR

The rectangular shape optimizes space on the PCB, making it easier to integrate into different types of circuit designs.

No. of Bits: 8

An 8-bit configuration is effective for a wide range of digital applications, providing flexibility and sufficient data handling capacity.

Nominal Supply Voltage / Vsup (V): 4.5

The nominal supply voltage of 4.5V allows compatibility with a variety of supply voltages, enhancing its usability in different circuits.

Load Capacitance (CL): 50 pF

A load capacitance of 50 pF supports efficient signal integrity, which is crucial for high-speed applications.

Power Supplies (V): 2/6

The capability to operate between 2V and 6V provides flexibility for various design requirements.

No. of Terminals: 20

With 20 terminals, it offers sufficient connection points for integrating into various circuits while maintaining compactness.

Package Style (Meter): SMALL OUTLINE

The small outline package style enhances space efficiency, making it ideal for space-constrained applications.

Maximum I (ol): 6 Amp

A maximum output current of 6 Amp provides strong driving capabilities, suitable for applications requiring high load output.

Propagation Delay (tpd): 175 ns

Although slightly longer than other specs, it still offers effective performance for many digital communication systems.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature ensures reliable operation in demanding environments, suitable for military and industrial applications.

Output Characteristics: 3-STATE

3-state output capability provides flexibility in bus communication, enabling easier data sharing between multiple devices.

Minimum Operating Temperature: -55 °C

The ability to operate at -55 °C ensures its functionality in extreme temperature environments, ideal for military and aerospace applications.

Terminal Finish: NICKEL PALLADIUM GOLD

A nickel-palladium-gold finish enhances corrosion resistance and ensures longer reliability in electrical connections.

Terminal Position: DUAL

Dual terminals allow for versatile mounting options, facilitating easier integration into various PCB designs.

No. of Ports: 2

Having two ports allows this product to handle multiple data paths, making it ideal for communication applications.

Maximum Seated Height: 2.65 mm

The low maximum seated height contributes to a slim profile, further minimizing space required on PCBs.

Width: 7.5 mm

A width of 7.5 mm allows the component to fit easily into tight spaces without compromising performance.

Output Polarity: TRUE

True output polarity is critical for proper circuit integration, ensuring predictable functionality in designs.

Minimum Supply Voltage (Vsup): 2 V

Starts functioning at a low voltage of 2V, making it suitable for low-power applications and battery-operated devices.

Maximum Time At Peak Reflow Temperature (s): 30

The reflow temperature tolerance ensures compatibility with standard soldering practices, simplifying the manufacturing process.

Peak Reflow Temperature °C: 260

A high peak reflow temperature indicates robustness in manufacturing, capable of withstanding harsh soldering processes.

Length: 12.8 mm

A compact length helps ensure compatibility with a wide range of PCB designs while maximizing layout efficiency.

Temperature Grade: MILITARY

Being classified as a military-grade component guarantees reliability and durability in extreme conditions, suitable for critical applications.

Technology: CMOS

CMOS technology offers low power consumption and high efficiency, making this product suitable for modern electronics.

Terminal Form: GULL WING

Gull wing terminals facilitate easy soldering and connection to PCBs, enhancing manufacturability.

Packing Method: TR

The packing method ensures efficient handling during manufacturing and helps maintain product integrity.

Terminal Pitch: 1.27 mm

A terminal pitch of 1.27 mm strikes a balance between size and ease of soldering, making it versatile for various designs.

Control Type: ENABLE LOW

Low-enable control provides easier integration into systems that require specific control logic, enhancing design flexibility.

Moisture Sensitivity Level (MSL): 3

An MSL of 3 highlights its suitable handling requirements, guiding manufacturers in proper storage and usage to ensure reliability.

Maximum Supply Voltage (Vsup): 6 V

A high maximum supply voltage capability grants versatility in various power environments, supporting a broad range of applications.

Technical Specifications

Bus Driver & Transceivers M74HC541RM13TR attributes and parameters. Explore more Bus Driver & Transceivers devices from STMicroelectronics

Specs

Control Type:

ENABLE LOW

Family:

HC/UH

JESD-30 Code:

R-PDSO-G20

JESD-609 Code:

e4

Length:

12.8 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

6 Amp

Moisture Sensitivity Level (MSL):

3

No. of Bits:

8

No. of Functions:

1

No. of Ports:

2

No. of Terminals:

20

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

3-STATE

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP24,.3

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/6

Propagation Delay At Nominal Supply:

26 ns

Propagation Delay (tpd):

175 ns

Qualification:

Not Qualified

Maximum Seated Height:

2.65 mm

Sub-Category:

Bus Driver/Transceivers

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

4.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

7.5 mm

Trade Compliance

M74HC541RM13TR Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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