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BTB04-600TRG

STMicroelectronics

BTB04-600TRG by STMicroelectronics

BTB04-600TRG by STMicroelectronics is a TRIAC with 600V repetitive peak off-state voltage, 4A max RMS on-state current, and 5mA max DC gate trigger current. It is ideal for AC power control applications due to its high operating temperature range of -40 °C to 110°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,199 parts In-Stock

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3,199

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Anansix

USA . 2,006 parts In-Stock

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2,006

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Digiode

USA . 220 parts In-Stock

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220

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ComSIT Distribution GmbH

Germany . 200 parts In-Stock

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200

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IDEA Electronic Components Group

UK . 317 parts In-Stock

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$4.296

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$3.867

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317

$4.296

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$3.867

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Advanced Electronics

New Zealand . 870 parts In-Stock

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$5.630

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$5.123

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$4.617

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870

$5.630

$5.123

$4.617

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MKK Technologies

India . 701 parts In-Stock

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$8.079

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701

$8.079

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DigiPath Technology Company

USA . 701 parts In-Stock

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$8.079

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701

$8.079

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AZTECH Wire

Italy . 501 parts In-Stock

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$20.410

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$20.410

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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2,500

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Parana Technologies

USA . 2,273 parts In-Stock

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$5.137

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$5.137

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Northwest PG Solutions

USA . 1,159 parts In-Stock

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Perfect Parts

USA . 803 parts In-Stock

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Native Components

USA . 656 parts In-Stock

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656

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Corphita

USA . 640 parts In-Stock

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640

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Overview

Elevate your electronic projects with the BTB04-600TRG by STMicroelectronics, a top-quality TRIAC that guarantees reliability and performance. With a maximum RMS On-state Current of 4A and Repetitive Peak Off-state Voltage of 600V, this TRIAC is perfect for a wide range of applications. From lighting control to motor speed regulation, this versatile component offers customers exceptional value, efficiency, and durability. Trust STMicroelectronics to deliver cutting-edge technology that meets your needs and exceeds your expectations.

Feature Benefit Bullets

Maximum On-state Voltage: 1.4 V

Low on-state voltage ensures efficient power consumption and reduced heat generation.

Maximum DC Gate Trigger Current: 5 mA

Low gate trigger current minimizes the power required to turn on the device, leading to energy savings.

Maximum Leakage Current: 0.75 mA

Low leakage current helps maintain the device's off-state condition, improving overall performance and reliability.

Maximum Operating Temperature: 110 °C

Wide operating temperature range allows for versatile applications in various environments.

Trigger Device Type: TRIAC

TRIAC design provides bidirectional control of current flow, suitable for AC applications.

Maximum RMS On-state Current: 4 A

High on-state current handling capability enables the device to support heavy loads with ease.

Maximum DC Gate Trigger Voltage: 2.5 V

Low gate trigger voltage ensures efficient control and operation of the device.

Repetitive Peak Off-state Voltage: 600 V

High off-state voltage withstand capability makes the device suitable for high voltage applications.

Minimum Critical Rate of Rise of Commutation Voltage: 1 V/us

Fast commutation voltage response ensures smooth switching between on and off states.

Minimum Critical Rate of Rise of Off-state Voltage: 10 V/us

Fast off-state voltage response enables quick and reliable turn-off of the device.

Maximum Holding Current: 15 mA

High holding current ensures the device remains in the on-state even in the presence of external disturbances.

Technical Specifications

Triode For Alternating Current (TRIAC) BTB04-600TRG attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from STMicroelectronics

Specs

Minimum Critical Rate of Rise of Commutation Voltage:

1 V/us

Minimum Critical Rate of Rise of Off-state Voltage:

10 V/us

Maximum DC Gate Trigger Current:

5 mA

Maximum DC Gate Trigger Voltage:

2.5 V

Maximum Holding Current:

15 mA

Maximum Leakage Current:

.75 mA

Maximum On-state Voltage:

1.4 V

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Maximum RMS On-state Current:

4 A

Repetitive Peak Off-state Voltage:

600 V

Sub-Category:

TRIACs

Surface Mount:

NO

Trigger Device Type:

Trade Compliance

BTB04-600TRG Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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