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ACST1235-7G

STMicroelectronics

ACST1235-7G by STMicroelectronics

ACST1235-7G by STMicroelectronics is a TRIAC with 12A RMS on-state current, 35mA DC gate trigger current, and 700V repetitive peak off-state voltage. It is used in applications requiring AC switching such as dimmers, motor speed control, and heating control systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 9,962 parts In-Stock

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9,962

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ComSIT USA

USA . 6,000 parts In-Stock

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Anansix

USA . 2,362 parts In-Stock

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2,362

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ComSIT Distribution GmbH

Germany . 950 parts In-Stock

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950

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R&J Components

USA . 600 parts In-Stock

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600

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Digiode

USA . 121 parts In-Stock

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121

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IDEA Electronic Components Group

UK . 988 parts In-Stock

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$1.955

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$1.760

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988

$1.955

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$1.760

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MKK Technologies

India . 1,095 parts In-Stock

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$3.676

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$3.676

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DigiPath Technology Company

USA . 1,095 parts In-Stock

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$3.676

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$3.676

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Microchip USA

USA . 435 parts In-Stock

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$6.862

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435

$6.862

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AZTECH Wire

Italy . 817 parts In-Stock

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$8.020

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817

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Perfect Parts

USA . 13,297 parts In-Stock

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Parana Technologies

USA . 1,647 parts In-Stock

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$2.338

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$2.338

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Northwest PG Solutions

USA . 1,118 parts In-Stock

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Corphita

USA . 684 parts In-Stock

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Native Components

USA . 122 parts In-Stock

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Overview

Upgrade your electronics with the ACST1235-7G by STMicroelectronics, a top-tier manufacturer known for quality and reliability. As a Triode For Alternating Current (TRIAC) device, this product offers seamless integration for a variety of applications. With a single configuration and surface mount capability, the ACST1235-7G provides convenience and efficiency. Experience the benefits of its high-quality construction and outstanding performance, making it an essential component for your projects. Trust STMicroelectronics to deliver value and innovation with the ACST1235-7G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection for the internal components, making the product reliable and long-lasting.

Maximum DC Gate Trigger Current: 35 mA

With a high maximum DC gate trigger current, this product can be easily controlled and triggered, allowing for efficient operation.

Configuration: SINGLE

The single configuration simplifies the setup and installation process, making it user-friendly and easy to integrate into various systems.

Surface Mount: YES

Being surface mountable makes this product space-efficient and suitable for compact designs.

Maximum Leakage Current: 1.5 mA

A low maximum leakage current ensures that the product efficiently switches off when not in use, saving energy and improving safety.

No. of Terminals: 2

Having only 2 terminals simplifies the wiring process and reduces the chances of wiring errors, making this product easy to use.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this product can withstand harsh environments and maintain performance under extreme conditions.

Trigger Device Type: TRIAC

The TRIAC trigger device type allows for bi-directional control of current flow, making this product versatile and suitable for various applications.

Repetitive Peak Off-state Voltage: 700 V

The high repetitive peak off-state voltage rating ensures that the product can handle high voltage spikes, enhancing its reliability in challenging environments.

Technical Specifications

Triode For Alternating Current (TRIAC) ACST1235-7G attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from STMicroelectronics

Specs

Additional Features:

HIGH RELIABILITY

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

2000 V/us

Maximum DC Gate Trigger Current:

35 mA

Maximum DC Gate Trigger Voltage:

1 V

Maximum Holding Current:

50 mA

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Maximum Leakage Current:

1.5 mA

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

245

Qualification:

Not Qualified

Maximum RMS On-state Current:

12 A

Repetitive Peak Off-state Voltage:

700 V

Sub-Category:

TRIACs

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trigger Device Type:

Trade Compliance

ACST1235-7G Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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