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74V1G80STR

STMicroelectronics

74V1G80STR by STMicroelectronics

74V1G80STR by STMicroelectronics is a CMOS latch with a 3.3V nominal voltage, ideal for military applications. It features a fast propagation delay of 15 ns and supports up to 4A output current. This compact, surface-mount device operates b/w -55 °C and 125°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

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ACDS - Activité Composants Distribution Service

France . 5,975 parts In-Stock

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Vyrian

USA . 2,392 parts In-Stock

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Digiode

USA . 1,891 parts In-Stock

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Anansix

USA . 1,127 parts In-Stock

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A&K Electronics

USA . 148 parts In-Stock

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Bristol Electronics

USA . 148 parts In-Stock

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Prism Electronics

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Distributors (Availability)

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Microchip USA

USA . 476 parts In-Stock

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$7.429

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AZTECH Wire

Italy . 902 parts In-Stock

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$19.180

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IDEA Electronic Components Group

UK . 377 parts In-Stock

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$25.430

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$22.887

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MKK Technologies

India . 287 parts In-Stock

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$47.819

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DigiPath Technology Company

USA . 287 parts In-Stock

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$47.819

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Component Stockers USA

USA . 288 parts In-Stock

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$99.990

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Native Components

USA . 460 parts In-Stock

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$247.505

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$242.555

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$240.080

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$237.605

460

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$237.605

Northwest PG Solutions

USA . 2,372 parts In-Stock

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$272.256

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Perfect Parts

USA . 13,384 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 5,975 parts In-Stock

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Glotronic Ltd.

UK . 4,780 parts In-Stock

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Corphita

USA . 2,798 parts In-Stock

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Parana Technologies

USA . 841 parts In-Stock

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$30.405

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Overview

Unlock unparalleled performance with the 74V1G80STR from STMicroelectronics—your go-to solution for robust latches and flip-flops. Renowned for their quality and innovation, STMicroelectronics offers a product designed to thrive in diverse applications, from automotive to industrial systems. With its compact, low-profile design and excellent temperature range, this high-speed CMOS device ensures reliability and efficiency, delivering exceptional value that empowers your projects to excel.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material offers durability and reliability, making the latch suitable for various applications.

Surface Mount: YES

Surface mount technology allows for compact design and ease of integration in modern PCB layouts.

Package Shape: RECTANGULAR

The rectangular shape facilitates efficient space utilization on the circuit board.

Nominal Supply Voltage / Vsup: 3.3 V

This nominal voltage is optimal for many digital circuits, ensuring compatibility with widespread devices.

Power Supplies (V): 2/5.5 V

Wide supply voltage range enhances versatility for various applications.

No. of Terminals: 5

The 5-terminal design provides sufficient connectivity while maintaining a compact form factor.

Package Style (Meter): SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

This style promotes low-profile designs ideal for space-constrained applications.

Maximum I (ol): 4 Amp

High output current capability supports robust performance in demanding applications.

Propagation Delay (tpd): 15 ns

Low propagation delay ensures fast switching speeds, making it suitable for high-speed digital circuits.

Maximum Operating Temperature: 125 °C

This high temperature tolerance is essential for military and industrial applications in harsh environments.

Trigger Type: POSITIVE EDGE

Positive edge triggering enhances reliability and predictability in digital signal processing.

Minimum Operating Temperature: -55 °C

Extreme temperature capabilities make this latch suitable for various outdoor and military applications.

Terminal Finish: MATTE TIN

This finish provides good solderability and corrosion resistance for long-term reliability.

Terminal Position: DUAL

Dual terminal positioning allows for flexible layout options on the PCB.

Maximum Seated Height: 1.45 mm

Maintaining a low seated height supports compact device designs.

Width: 1.625 mm

This narrow width is ideal for high-density circuit applications.

Output Polarity: INVERTED

Inverted output polarity can be beneficial for specific circuit configurations and logic designs.

Minimum Supply Voltage (Vsup): 2 V

Allows operation in low voltage environments which are increasingly common in modern electronics.

Maximum Time At Peak Reflow Temperature (s): 30

Allows for flexibility during soldering processes in manufacturing without compromising component integrity.

Peak Reflow Temperature °C: 260 °C

High reflow temperature capability supports compatibility with lead-free soldering processes.

Length: 2.9 mm

Compact length is advantageous for space-saving PCB designs.

Temperature Grade: MILITARY

MIL-STD components ensure reliability and performance under adverse conditions, suitable for defense applications.

Technology: CMOS

CMOS technology allows for low power consumption and high density, ideal for modern electronic devices.

Terminal Form: GULL WING

Gull wing form provides excellent solder joint reliability and is standard for many surface-mounted devices.

Packing Method: TR

Tape and reel packaging facilitates automated assembly and is efficient for mass production.

Terminal Pitch: 0.95 mm

Narrow terminal pitch allows for greater component density on circuit boards.

Minimum fmax: 150 MHz

A high maximum frequency indicates suitability for high-speed digital applications.

Maximum Supply Voltage (Vsup): 5.5 V

The broad voltage compatibility allows the latch to function properly in many circuit designs.

Technical Specifications

Latches & Flip-Flops 74V1G80STR attributes and parameters. Explore more Latches & Flip-Flops devices from STMicroelectronics

Specs

Family:

74V

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

2.9 mm

Logic IC Type:

Maximum I (ol):

4 Amp

Moisture Sensitivity Level (MSL):

1

No. of Bits:

1

No. of Functions:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Polarity:

INVERTED

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/5.5

Propagation Delay (tpd):

15 ns

Qualification:

Not Qualified

Maximum Seated Height:

1.45 mm

Sub-Category:

FF/Latches

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Trigger Type:

POSITIVE EDGE

Width:

1.625 mm

Minimum fmax:

150 MHz

Trade Compliance

74V1G80STR Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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